The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Kami mencipta modulator dwi-polarisasi Dalam fasa dan Kuadratur (DP-IQ) berasaskan InP yang terdiri daripada tatasusunan modulator Mach-Zehnder (MZ) yang disepadukan dengan perintang penamatan RF dan bahagian belakang melalui lubang untuk modulator pemacu koheren lebar jalur tinggi dan mendedahkannya kebolehpercayaan yang tinggi. Penyepaduan ini membenarkan saiz cip (saiz cip: 4.4mm×3mm) dikurangkan sebanyak 59% berbanding cip sebelumnya tanpa penyepaduan ini, iaitu cip sebelumnya memerlukan 8 perintang cip untuk menamatkan isyarat RF dan 12 pad elektrod RF untuk sambungan elektrik dengan perintang ini dalam konfigurasi Signal-Ground-Signal. Modulator MZ ini mempamerkan lebar jalur 3-dB sekitar 40 GHz sebagai tindak balas elektrik/optiknya, yang mencukupi untuk lebih 400 Gbit/s sistem penghantaran koheren menggunakan modulasi amplitud kuadratur 16-ary (QAM) dan isyarat 64QAM. Juga, kami menyiasat kemerosotan pesat yang menjejaskan kebolehpercayaan modulator DP-IQ berasaskan InP. Degradasi pantas ini yang kami panggil kerosakan optik disebabkan oleh kuasa cahaya kejadian yang kuat dan keadaan voltan pincang songsang yang tinggi di pintu masuk elektrod dalam setiap lengan modulator MZ. Degradasi pantas ini menyukarkan untuk menganggarkan jangka hayat cip menggunakan ujian penuaan dipercepatkan, kerana nilai voltan pecahan yang mendorong kerosakan optik jauh berbeza bergantung pada keadaan, seperti kuasa cahaya, panjang gelombang operasi dan suhu cip. Oleh itu, kami memilih kaedah ujian tegasan langkah untuk menyiasat jangka hayat cip. Akibatnya, kami mengesahkan bahawa kerosakan optik berlaku apabila ketumpatan arus foto di pintu masuk elektrod melebihi ketumpatan arus ambang dan menunjukkan bahawa modulator berasaskan InP tidak merosot melainkan keadaan operasi mencapai ketumpatan arus ambang. Ketumpatan arus ambang ini adalah bebas daripada kuasa cahaya kejadian, panjang gelombang operasi dan suhu cip.
Hajime TANAKA
Sumitomo Electric Industries, Ltd.
Tsutomu ISHIKAWA
Sumitomo Electric Industries, Ltd.
Takashi KITAMURA
Sumitomo Electric Industries, Ltd.
Masataka WATANABE
Sumitomo Electric Industries, Ltd.
Ryuji YAMABI
Sumitomo Electric Industries, Ltd.
Ryo YAMAGUCHI
Sumitomo Electric Industries, Ltd.
Naoya KONO
Sumitomo Electric Industries, Ltd.
Takehiko KIKUCHI
Sumitomo Electric Industries, Ltd.
Morihiro SEKI
Sumitomo Electric Industries, Ltd.
Tomokazu KATSUYAMA
Sumitomo Electric Industries, Ltd.
Mitsuru EKAWA
Sumitomo Electric Industries, Ltd.
Hajime SHOJI
Sumitomo Electric Industries, Ltd.
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Salinan
Hajime TANAKA, Tsutomu ISHIKAWA, Takashi KITAMURA, Masataka WATANABE, Ryuji YAMABI, Ryo YAMAGUCHI, Naoya KONO, Takehiko KIKUCHI, Morihiro SEKI, Tomokazu KATSUYAMA, Mitsuru EKAWA, Hajime SHOJI, "Highly Reliable and Compact InP-Based In-Phase and Quadrature Modulators for Over 400 Gbit/s Coherent Transmission Systems" in IEICE TRANSACTIONS on Electronics,
vol. E103-C, no. 11, pp. 661-668, November 2020, doi: 10.1587/transele.2019OCP0005.
Abstract: We fabricated an InP-based dual-polarization In-phase and Quadrature (DP-IQ) modulator consisting of a Mach-Zehnder (MZ) modulator array integrated with RF termination resistors and backside via holes for high-bandwidth coherent driver modulators and revealed its high reliability. These integrations allowed the chip size (Chip size: 4.4mm×3mm) to be reduced by 59% compared with the previous chip without these integrations, that is, the previous chip needed 8 chip-resistors for terminating RF signals and 12 RF electrode pads for the electrical connection with these resistors in a Signal-Ground-Signal configuration. This MZ modulator exhibited a 3-dB bandwidth of around 40 GHz as its electrical/optical response, which is sufficient for over 400 Gbit/s coherent transmission systems using 16-ary quadrature amplitude modulation (QAM) and 64QAM signals. Also, we investigated a rapid degradation which affects the reliability of InP-based DP-IQ modulators. This rapid degradation we called optical damage is caused by strong incident light power and a high reverse bias voltage condition at the entrance of an electrode in each arm of the MZ modulators. This rapid degradation makes it difficult to estimate the lifetime of the chip using an accelerated aging test, because the value of the breakdown voltage which induces optical damage varies considerably depending on conditions, such as light power, operation wavelength, and chip temperature. Therefore, we opted for the step stress test method to investigate the lifetime of the chip. As a result, we confirmed that optical damage occurred when photo-current density at the entrance of an electrode exceeded threshold current density and demonstrated that InP-based modulators did not degrade unless operation conditions reached threshold current density. This threshold current density was independent of incident light power, operation wavelength and chip temperature.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2019OCP0005/_p
Salinan
@ARTICLE{e103-c_11_661,
author={Hajime TANAKA, Tsutomu ISHIKAWA, Takashi KITAMURA, Masataka WATANABE, Ryuji YAMABI, Ryo YAMAGUCHI, Naoya KONO, Takehiko KIKUCHI, Morihiro SEKI, Tomokazu KATSUYAMA, Mitsuru EKAWA, Hajime SHOJI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Highly Reliable and Compact InP-Based In-Phase and Quadrature Modulators for Over 400 Gbit/s Coherent Transmission Systems},
year={2020},
volume={E103-C},
number={11},
pages={661-668},
abstract={We fabricated an InP-based dual-polarization In-phase and Quadrature (DP-IQ) modulator consisting of a Mach-Zehnder (MZ) modulator array integrated with RF termination resistors and backside via holes for high-bandwidth coherent driver modulators and revealed its high reliability. These integrations allowed the chip size (Chip size: 4.4mm×3mm) to be reduced by 59% compared with the previous chip without these integrations, that is, the previous chip needed 8 chip-resistors for terminating RF signals and 12 RF electrode pads for the electrical connection with these resistors in a Signal-Ground-Signal configuration. This MZ modulator exhibited a 3-dB bandwidth of around 40 GHz as its electrical/optical response, which is sufficient for over 400 Gbit/s coherent transmission systems using 16-ary quadrature amplitude modulation (QAM) and 64QAM signals. Also, we investigated a rapid degradation which affects the reliability of InP-based DP-IQ modulators. This rapid degradation we called optical damage is caused by strong incident light power and a high reverse bias voltage condition at the entrance of an electrode in each arm of the MZ modulators. This rapid degradation makes it difficult to estimate the lifetime of the chip using an accelerated aging test, because the value of the breakdown voltage which induces optical damage varies considerably depending on conditions, such as light power, operation wavelength, and chip temperature. Therefore, we opted for the step stress test method to investigate the lifetime of the chip. As a result, we confirmed that optical damage occurred when photo-current density at the entrance of an electrode exceeded threshold current density and demonstrated that InP-based modulators did not degrade unless operation conditions reached threshold current density. This threshold current density was independent of incident light power, operation wavelength and chip temperature.},
keywords={},
doi={10.1587/transele.2019OCP0005},
ISSN={1745-1353},
month={November},}
Salinan
TY - JOUR
TI - Highly Reliable and Compact InP-Based In-Phase and Quadrature Modulators for Over 400 Gbit/s Coherent Transmission Systems
T2 - IEICE TRANSACTIONS on Electronics
SP - 661
EP - 668
AU - Hajime TANAKA
AU - Tsutomu ISHIKAWA
AU - Takashi KITAMURA
AU - Masataka WATANABE
AU - Ryuji YAMABI
AU - Ryo YAMAGUCHI
AU - Naoya KONO
AU - Takehiko KIKUCHI
AU - Morihiro SEKI
AU - Tomokazu KATSUYAMA
AU - Mitsuru EKAWA
AU - Hajime SHOJI
PY - 2020
DO - 10.1587/transele.2019OCP0005
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E103-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 2020
AB - We fabricated an InP-based dual-polarization In-phase and Quadrature (DP-IQ) modulator consisting of a Mach-Zehnder (MZ) modulator array integrated with RF termination resistors and backside via holes for high-bandwidth coherent driver modulators and revealed its high reliability. These integrations allowed the chip size (Chip size: 4.4mm×3mm) to be reduced by 59% compared with the previous chip without these integrations, that is, the previous chip needed 8 chip-resistors for terminating RF signals and 12 RF electrode pads for the electrical connection with these resistors in a Signal-Ground-Signal configuration. This MZ modulator exhibited a 3-dB bandwidth of around 40 GHz as its electrical/optical response, which is sufficient for over 400 Gbit/s coherent transmission systems using 16-ary quadrature amplitude modulation (QAM) and 64QAM signals. Also, we investigated a rapid degradation which affects the reliability of InP-based DP-IQ modulators. This rapid degradation we called optical damage is caused by strong incident light power and a high reverse bias voltage condition at the entrance of an electrode in each arm of the MZ modulators. This rapid degradation makes it difficult to estimate the lifetime of the chip using an accelerated aging test, because the value of the breakdown voltage which induces optical damage varies considerably depending on conditions, such as light power, operation wavelength, and chip temperature. Therefore, we opted for the step stress test method to investigate the lifetime of the chip. As a result, we confirmed that optical damage occurred when photo-current density at the entrance of an electrode exceeded threshold current density and demonstrated that InP-based modulators did not degrade unless operation conditions reached threshold current density. This threshold current density was independent of incident light power, operation wavelength and chip temperature.
ER -