The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Apabila BJT disinari oleh sinar gamma, cas terperangkap antara muka dan cas terperangkap oksida positif terbentuk melalui pengionan pada Si-SiO2 antara muka dan SiO2 wilayah masing-masing. Caj terperangkap ini menjejaskan pergerakan pembawa bergantung pada jenis BJT. Kertas kerja ini membentangkan keputusan eksperimen berkenaan ciri-ciri operasi pnp Si BJT yang disinari gamma.
Sung Ho AHN
Korea Atomic Energy Research Institute
Gwang Min SUN
Korea Atomic Energy Research Institute
Hani BAEK
Korea Research Institute of Standards and Sciences
Byung-Gun PARK
Korea Atomic Energy Research Institute
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Salinan
Sung Ho AHN, Gwang Min SUN, Hani BAEK, Byung-Gun PARK, "Operating Characteristics of Gamma Irradiated Si BJT" in IEICE TRANSACTIONS on Electronics,
vol. E105-C, no. 10, pp. 631-634, October 2022, doi: 10.1587/transele.2021FUS0001.
Abstract: When BJTs are irradiated by gamma rays, interface trapped charges and positive oxide trapped charges are formed by ionization at the Si-SiO2 interface and SiO2 regions, respectively. These trapped charges affect the movement of carriers depending on the type of BJT. This paper presents experimental results regarding operating characteristics of gamma irradiated pnp Si BJTs.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2021FUS0001/_p
Salinan
@ARTICLE{e105-c_10_631,
author={Sung Ho AHN, Gwang Min SUN, Hani BAEK, Byung-Gun PARK, },
journal={IEICE TRANSACTIONS on Electronics},
title={Operating Characteristics of Gamma Irradiated Si BJT},
year={2022},
volume={E105-C},
number={10},
pages={631-634},
abstract={When BJTs are irradiated by gamma rays, interface trapped charges and positive oxide trapped charges are formed by ionization at the Si-SiO2 interface and SiO2 regions, respectively. These trapped charges affect the movement of carriers depending on the type of BJT. This paper presents experimental results regarding operating characteristics of gamma irradiated pnp Si BJTs.},
keywords={},
doi={10.1587/transele.2021FUS0001},
ISSN={1745-1353},
month={October},}
Salinan
TY - JOUR
TI - Operating Characteristics of Gamma Irradiated Si BJT
T2 - IEICE TRANSACTIONS on Electronics
SP - 631
EP - 634
AU - Sung Ho AHN
AU - Gwang Min SUN
AU - Hani BAEK
AU - Byung-Gun PARK
PY - 2022
DO - 10.1587/transele.2021FUS0001
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E105-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2022
AB - When BJTs are irradiated by gamma rays, interface trapped charges and positive oxide trapped charges are formed by ionization at the Si-SiO2 interface and SiO2 regions, respectively. These trapped charges affect the movement of carriers depending on the type of BJT. This paper presents experimental results regarding operating characteristics of gamma irradiated pnp Si BJTs.
ER -