The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
pandangan teks lengkap
109
Dalam kertas kerja ini, penguat kuasa Doherty asimetrik berkecekapan tinggi berkuasa tinggi berdasarkan peranti GaN HEMT voltan tinggi dengan pemadanan input dalaman untuk aplikasi stesen pangkalan dicadangkan dan diterangkan. Untuk struktur Doherty asimetri 1:2 tiga hala, kuasa keluaran yang sangat tinggi iaitu 1 kW dengan kecekapan puncak 83% dan keuntungan kuasa rata linear kira-kira 15 dB telah dicapai dalam jalur frekuensi 2.11-2.17 GHz, manakala kuasa keluaran 59.5 dBm dengan kecekapan puncak 78% dan keuntungan kuasa linear 12 dB dan kuasa keluaran 59.2 dBm dengan kecekapan puncak 65% dan keuntungan kuasa linear 13 dB diperolehi merentasi 1.8-2.2 GHz. Untuk menyediakan operasi jalur lebar berkecekapan tinggi, konsep struktur Doherty terbalik digunakan dan diterangkan secara terperinci. Dengan menggunakan seni bina penguat Doherty terbalik jalur lebar berkuasa tinggi dengan transistor HEMT GaN 2×120-W, kuasa tepu lebih besar daripada 54 dBm, keuntungan kuasa linear lebih daripada 13 dB dan kecekapan longkang lebih daripada 50% pada Pengunduran kuasa 7-dB dalam lebar jalur frekuensi 1.8-2.7 GHz telah diperolehi.
Andrei GREBENNIKOV
Sumitomo Electric Europe Ltd.
James WONG
Sumitomo Electric Device Innovations Inc.
Hiroaki DEGUCHI
Sumitomo Electric Device Innovations Inc.
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Salinan
Andrei GREBENNIKOV, James WONG, Hiroaki DEGUCHI, "High-Power High-Efficiency GaN HEMT Doherty Amplifiers for Base Station Applications" in IEICE TRANSACTIONS on Electronics,
vol. E104-C, no. 10, pp. 488-495, October 2021, doi: 10.1587/transele.2021MMI0003.
Abstract: In this paper, the high-power high-efficiency asymmetric Doherty power amplifiers based on high-voltage GaN HEMT devices with internal input matching for base station applications are proposed and described. For a three-way 1:2 asymmetric Doherty structures, an exceptionally high output power of 1 kW with a peak efficiency of 83% and a linear flat power gain of about 15 dB was achieved in a frequency band of 2.11-2.17 GHz, whereas an output power of 59.5 dBm with a peak efficiency of 78% and linear power gain of 12 dB and an output power of 59.2 dBm with a peak efficiency of 65% and a linear power gain of 13 dB were obtained across 1.8-2.2 GHz. To provide a high-efficiency broadband operation, the concept of inverted Doherty structure is applied and described in detail. By using a high-power broadband inverted Doherty amplifier architecture with a 2×120-W GaN HEMT transistor, a saturated power of greater than 54 dBm, a linear power gain of greater than 13 dB and a drain efficiency of greater than 50% at 7-dB power backoff in a frequency bandwidth of 1.8-2.7 GHz were obtained.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2021MMI0003/_p
Salinan
@ARTICLE{e104-c_10_488,
author={Andrei GREBENNIKOV, James WONG, Hiroaki DEGUCHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={High-Power High-Efficiency GaN HEMT Doherty Amplifiers for Base Station Applications},
year={2021},
volume={E104-C},
number={10},
pages={488-495},
abstract={In this paper, the high-power high-efficiency asymmetric Doherty power amplifiers based on high-voltage GaN HEMT devices with internal input matching for base station applications are proposed and described. For a three-way 1:2 asymmetric Doherty structures, an exceptionally high output power of 1 kW with a peak efficiency of 83% and a linear flat power gain of about 15 dB was achieved in a frequency band of 2.11-2.17 GHz, whereas an output power of 59.5 dBm with a peak efficiency of 78% and linear power gain of 12 dB and an output power of 59.2 dBm with a peak efficiency of 65% and a linear power gain of 13 dB were obtained across 1.8-2.2 GHz. To provide a high-efficiency broadband operation, the concept of inverted Doherty structure is applied and described in detail. By using a high-power broadband inverted Doherty amplifier architecture with a 2×120-W GaN HEMT transistor, a saturated power of greater than 54 dBm, a linear power gain of greater than 13 dB and a drain efficiency of greater than 50% at 7-dB power backoff in a frequency bandwidth of 1.8-2.7 GHz were obtained.},
keywords={},
doi={10.1587/transele.2021MMI0003},
ISSN={1745-1353},
month={October},}
Salinan
TY - JOUR
TI - High-Power High-Efficiency GaN HEMT Doherty Amplifiers for Base Station Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 488
EP - 495
AU - Andrei GREBENNIKOV
AU - James WONG
AU - Hiroaki DEGUCHI
PY - 2021
DO - 10.1587/transele.2021MMI0003
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E104-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2021
AB - In this paper, the high-power high-efficiency asymmetric Doherty power amplifiers based on high-voltage GaN HEMT devices with internal input matching for base station applications are proposed and described. For a three-way 1:2 asymmetric Doherty structures, an exceptionally high output power of 1 kW with a peak efficiency of 83% and a linear flat power gain of about 15 dB was achieved in a frequency band of 2.11-2.17 GHz, whereas an output power of 59.5 dBm with a peak efficiency of 78% and linear power gain of 12 dB and an output power of 59.2 dBm with a peak efficiency of 65% and a linear power gain of 13 dB were obtained across 1.8-2.2 GHz. To provide a high-efficiency broadband operation, the concept of inverted Doherty structure is applied and described in detail. By using a high-power broadband inverted Doherty amplifier architecture with a 2×120-W GaN HEMT transistor, a saturated power of greater than 54 dBm, a linear power gain of greater than 13 dB and a drain efficiency of greater than 50% at 7-dB power backoff in a frequency bandwidth of 1.8-2.7 GHz were obtained.
ER -