The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
pandangan teks lengkap
146
Teknologi penguat kuasa tinggi untuk stesen transceiver asas (BTS) untuk sistem komunikasi mudah alih generasi ke-5 (5G) dan apa yang dipanggil melangkaui sistem 5G (B5G) disemak. Untuk sub-6, yang dikategorikan dalam julat frekuensi 1 (FR1) dalam 5G, penguat Doherty jalur lebar diperkenalkan, dan penguat modulasi beban berbilang jalur, penguat pengesan sampul surat dan penguat kuasa digital untuk B5G diterangkan. Untuk gelombang milimeter 5G, yang dikategorikan kepada julat frekuensi 2 (FR2), GaAs dan GaN MMIC yang beroperasi pada sekitar 28GHz diperkenalkan. Akhir sekali, prospek masa depan untuk peranti THz GaN diterangkan.
Koji YAMANAKA
Information Technology R&D Center
Shintaro SHINJO
Information Technology R&D Center
Yuji KOMATSUZAKI
Information Technology R&D Center
Shuichi SAKATA
Information Technology R&D Center
Keigo NAKATANI
Information Technology R&D Center
Yutaro YAMAGUCHI
Information Technology R&D Center
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Salinan
Koji YAMANAKA, Shintaro SHINJO, Yuji KOMATSUZAKI, Shuichi SAKATA, Keigo NAKATANI, Yutaro YAMAGUCHI, "Overview and Prospects of High Power Amplifier Technology Trend for 5G and beyond 5G Base Stations" in IEICE TRANSACTIONS on Electronics,
vol. E104-C, no. 10, pp. 526-533, October 2021, doi: 10.1587/transele.2021MMI0008.
Abstract: High power amplifier technologies for base transceiver stations (BTSs) for the 5th generation (5G) mobile communication systems and so-called beyond 5G (B5G) systems are reviewed. For sub-6, which is categorized into frequency range 1 (FR1) in 5G, wideband Doherty amplifiers are introduced, and a multi-band load modulation amplifier, an envelope tracking amplifier, and a digital power amplifier for B5G are explained. For millimeter wave 5G, which is categorized into frequency range 2 (FR2), GaAs and GaN MMICs operating at around 28GHz are introduced. Finally, future prospect for THz GaN devices is described.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2021MMI0008/_p
Salinan
@ARTICLE{e104-c_10_526,
author={Koji YAMANAKA, Shintaro SHINJO, Yuji KOMATSUZAKI, Shuichi SAKATA, Keigo NAKATANI, Yutaro YAMAGUCHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Overview and Prospects of High Power Amplifier Technology Trend for 5G and beyond 5G Base Stations},
year={2021},
volume={E104-C},
number={10},
pages={526-533},
abstract={High power amplifier technologies for base transceiver stations (BTSs) for the 5th generation (5G) mobile communication systems and so-called beyond 5G (B5G) systems are reviewed. For sub-6, which is categorized into frequency range 1 (FR1) in 5G, wideband Doherty amplifiers are introduced, and a multi-band load modulation amplifier, an envelope tracking amplifier, and a digital power amplifier for B5G are explained. For millimeter wave 5G, which is categorized into frequency range 2 (FR2), GaAs and GaN MMICs operating at around 28GHz are introduced. Finally, future prospect for THz GaN devices is described.},
keywords={},
doi={10.1587/transele.2021MMI0008},
ISSN={1745-1353},
month={October},}
Salinan
TY - JOUR
TI - Overview and Prospects of High Power Amplifier Technology Trend for 5G and beyond 5G Base Stations
T2 - IEICE TRANSACTIONS on Electronics
SP - 526
EP - 533
AU - Koji YAMANAKA
AU - Shintaro SHINJO
AU - Yuji KOMATSUZAKI
AU - Shuichi SAKATA
AU - Keigo NAKATANI
AU - Yutaro YAMAGUCHI
PY - 2021
DO - 10.1587/transele.2021MMI0008
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E104-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2021
AB - High power amplifier technologies for base transceiver stations (BTSs) for the 5th generation (5G) mobile communication systems and so-called beyond 5G (B5G) systems are reviewed. For sub-6, which is categorized into frequency range 1 (FR1) in 5G, wideband Doherty amplifiers are introduced, and a multi-band load modulation amplifier, an envelope tracking amplifier, and a digital power amplifier for B5G are explained. For millimeter wave 5G, which is categorized into frequency range 2 (FR2), GaAs and GaN MMICs operating at around 28GHz are introduced. Finally, future prospect for THz GaN devices is described.
ER -