The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Kertas kerja ini mencadangkan pemacu modulasi amplitud nadi empat peringkat berkuasa rendah 100Gb/s (Pemandu PAM-4) berdasarkan struktur pampasan herotan linear untuk modulator Lithium Niobate (LiNbO3) filem nipis, yang berjaya mencapai kelinearan tinggi dalam output. Teknologi memuncak induktif dan struktur longkang terbuka membolehkan keseluruhan litar mencapai lebar jalur 31-GHz. Dengan keluasan 0.292 mm2, cip pemacu PAM-4 yang dicadangkan direka dalam proses 65-nm untuk mencapai penggunaan kuasa sebanyak 37.7 mW. Keputusan simulasi pasca susun atur menunjukkan bahawa kecekapan kuasa ialah 0.37 mW/Gb/s, RLM adalah lebih daripada 96%, dan nilai FOM ialah 8.84.
Xiangyu MENG
Sun Yat-sen University
Kangfeng WEI
Sun Yat-sen University
Zhiyi YU
Sun Yat-sen University
Xinlun CAI
Sun Yat-sen University
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Salinan
Xiangyu MENG, Kangfeng WEI, Zhiyi YU, Xinlun CAI, "A Low Power 100-Gb/s PAM-4 Driver with Linear Distortion Compensation in 65-nm CMOS" in IEICE TRANSACTIONS on Electronics,
vol. E106-C, no. 1, pp. 7-13, January 2023, doi: 10.1587/transele.2022ECP5010.
Abstract: This paper proposes a low-power 100Gb/s four-level pulse amplitude modulation driver (PAM-4 Driver) based on linear distortion compensation structure for thin-film Lithium Niobate (LiNbO3) modulators, which manages to achieve high linearity in the output. The inductive peaking technology and open drain structure enable the overall circuit to achieve a 31-GHz bandwidth. With an area of 0.292 mm2, the proposed PAM-4 driver chip is designed in a 65-nm process to achieve power consumption of 37.7 mW. Post-layout simulation results show that the power efficiency is 0.37 mW/Gb/s, RLM is more than 96%, and the FOM value is 8.84.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2022ECP5010/_p
Salinan
@ARTICLE{e106-c_1_7,
author={Xiangyu MENG, Kangfeng WEI, Zhiyi YU, Xinlun CAI, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Low Power 100-Gb/s PAM-4 Driver with Linear Distortion Compensation in 65-nm CMOS},
year={2023},
volume={E106-C},
number={1},
pages={7-13},
abstract={This paper proposes a low-power 100Gb/s four-level pulse amplitude modulation driver (PAM-4 Driver) based on linear distortion compensation structure for thin-film Lithium Niobate (LiNbO3) modulators, which manages to achieve high linearity in the output. The inductive peaking technology and open drain structure enable the overall circuit to achieve a 31-GHz bandwidth. With an area of 0.292 mm2, the proposed PAM-4 driver chip is designed in a 65-nm process to achieve power consumption of 37.7 mW. Post-layout simulation results show that the power efficiency is 0.37 mW/Gb/s, RLM is more than 96%, and the FOM value is 8.84.},
keywords={},
doi={10.1587/transele.2022ECP5010},
ISSN={1745-1353},
month={January},}
Salinan
TY - JOUR
TI - A Low Power 100-Gb/s PAM-4 Driver with Linear Distortion Compensation in 65-nm CMOS
T2 - IEICE TRANSACTIONS on Electronics
SP - 7
EP - 13
AU - Xiangyu MENG
AU - Kangfeng WEI
AU - Zhiyi YU
AU - Xinlun CAI
PY - 2023
DO - 10.1587/transele.2022ECP5010
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E106-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 2023
AB - This paper proposes a low-power 100Gb/s four-level pulse amplitude modulation driver (PAM-4 Driver) based on linear distortion compensation structure for thin-film Lithium Niobate (LiNbO3) modulators, which manages to achieve high linearity in the output. The inductive peaking technology and open drain structure enable the overall circuit to achieve a 31-GHz bandwidth. With an area of 0.292 mm2, the proposed PAM-4 driver chip is designed in a 65-nm process to achieve power consumption of 37.7 mW. Post-layout simulation results show that the power efficiency is 0.37 mW/Gb/s, RLM is more than 96%, and the FOM value is 8.84.
ER -