The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
pandangan teks lengkap
102
Penyiasatan terperinci prestasi DC dan RF AlGaN/GaN HEMT pada substrat silikon perintang rendah (LR-Si) 3C-SiC/rendah dengan memperkenalkan lapisan GaN tebal dilaporkan dalam kertas ini. Pertumbuhan hetero-epitaxial dicapai dengan pemendapan wap kimia organik logam (MOCVD) pada substrat LR-Si 6 inci yang disediakan secara komersial melalui lapisan perantaraan 3C-SiC. HEMT yang dilaporkan mempamerkan kehilangan RF yang sangat rendah dan ciri-ciri penguat yang stabil secara terma dengan pengenalan lapisan GaN yang tebal. Ciri isyarat kecil dan isyarat besar yang bergantung kepada suhu mengesahkan keberkesanan lapisan GaN tebal pada LR-Si, terutamanya dalam pengurangan kehilangan RF walaupun pada suhu tinggi. Secara ringkasnya, potensi tinggi peranti yang dilaporkan disahkan untuk aplikasi gelombang mikro.
Akio WAKEJIMA
Nagoya Institute of Technology
Arijit BOSE
Nagoya Institute of Technology
Debaleen BISWAS
Nagoya Institute of Technology
Shigeomi HISHIKI
Air Water Inc.
Sumito OUCHI
Air Water Inc.
Koichi KITAHARA
Air Water Inc.
Keisuke KAWAMURA
Air Water Inc.
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Salinan
Akio WAKEJIMA, Arijit BOSE, Debaleen BISWAS, Shigeomi HISHIKI, Sumito OUCHI, Koichi KITAHARA, Keisuke KAWAMURA, "AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for Microwave Applications" in IEICE TRANSACTIONS on Electronics,
vol. E105-C, no. 10, pp. 457-465, October 2022, doi: 10.1587/transele.2022MMI0009.
Abstract: A detailed investigation of DC and RF performance of AlGaN/GaN HEMT on 3C-SiC/low resistive silicon (LR-Si) substrate by introducing a thick GaN layer is reported in this paper. The hetero-epitaxial growth is achieved by metal organic chemical vapor deposition (MOCVD) on a commercially prepared 6-inch LR-Si substrate via a 3C-SiC intermediate layer. The reported HEMT exhibited very low RF loss and thermally stable amplifier characteristics with the introduction of a thick GaN layer. The temperature-dependent small-signal and large-signal characteristics verified the effectiveness of the thick GaN layer on LR-Si, especially in reduction of RF loss even at high temperatures. In summary, a high potential of the reported device is confirmed for microwave applications.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2022MMI0009/_p
Salinan
@ARTICLE{e105-c_10_457,
author={Akio WAKEJIMA, Arijit BOSE, Debaleen BISWAS, Shigeomi HISHIKI, Sumito OUCHI, Koichi KITAHARA, Keisuke KAWAMURA, },
journal={IEICE TRANSACTIONS on Electronics},
title={AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for Microwave Applications},
year={2022},
volume={E105-C},
number={10},
pages={457-465},
abstract={A detailed investigation of DC and RF performance of AlGaN/GaN HEMT on 3C-SiC/low resistive silicon (LR-Si) substrate by introducing a thick GaN layer is reported in this paper. The hetero-epitaxial growth is achieved by metal organic chemical vapor deposition (MOCVD) on a commercially prepared 6-inch LR-Si substrate via a 3C-SiC intermediate layer. The reported HEMT exhibited very low RF loss and thermally stable amplifier characteristics with the introduction of a thick GaN layer. The temperature-dependent small-signal and large-signal characteristics verified the effectiveness of the thick GaN layer on LR-Si, especially in reduction of RF loss even at high temperatures. In summary, a high potential of the reported device is confirmed for microwave applications.},
keywords={},
doi={10.1587/transele.2022MMI0009},
ISSN={1745-1353},
month={October},}
Salinan
TY - JOUR
TI - AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for Microwave Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 457
EP - 465
AU - Akio WAKEJIMA
AU - Arijit BOSE
AU - Debaleen BISWAS
AU - Shigeomi HISHIKI
AU - Sumito OUCHI
AU - Koichi KITAHARA
AU - Keisuke KAWAMURA
PY - 2022
DO - 10.1587/transele.2022MMI0009
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E105-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2022
AB - A detailed investigation of DC and RF performance of AlGaN/GaN HEMT on 3C-SiC/low resistive silicon (LR-Si) substrate by introducing a thick GaN layer is reported in this paper. The hetero-epitaxial growth is achieved by metal organic chemical vapor deposition (MOCVD) on a commercially prepared 6-inch LR-Si substrate via a 3C-SiC intermediate layer. The reported HEMT exhibited very low RF loss and thermally stable amplifier characteristics with the introduction of a thick GaN layer. The temperature-dependent small-signal and large-signal characteristics verified the effectiveness of the thick GaN layer on LR-Si, especially in reduction of RF loss even at high temperatures. In summary, a high potential of the reported device is confirmed for microwave applications.
ER -