The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Penambahbaikan nisbah hidup/mati dalam transistor kesan medan organik melalui penggunaan pentacene dan molibdenum trioksida (MoO3) lapisan telah dicuba melalui penyediaan MoO tidak berterusan3 lapisan menggunakan topeng mesh. Kami menyediakan tiga jenis peranti. Peranti A mempunyai struktur kenalan atas konvensional dengan n-jenis wafer Si dan SiO setebal 200nm2 filem di mana kami mendepositkan filem pentacene setebal 70nm dan lapisan elektrod atas Au setebal 30nm. Peranti B dan C mempunyai struktur yang serupa dengan peranti A tetapi menerima MoO berterusan dan tidak berterusan3 lapisan, masing-masing. Arus mati dalam Peranti B adalah sangat tinggi; sebaliknya, arus mati dalam Peranti C dikurangkan dan bergantung kepada pemisahan MoO3 lapisan. Disimpulkan bahawa rintangan tinggi kawasan tanpa MoO3 menyumbang kepada pengurangan arus.
Takumi KOBAYASHI
Niigata Univ.
Masahiro MINAGAWA
Nagaoka Coll.
Akira BABA
Niigata Univ.
Keizo KATO
Niigata Univ.
Kazunari SHINBO
Nagaoka Coll.
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Salinan
Takumi KOBAYASHI, Masahiro MINAGAWA, Akira BABA, Keizo KATO, Kazunari SHINBO, "On/Off Ratio of a Pentacene Field-Effect Transistor with a Discontinuous MoO3 Layer" in IEICE TRANSACTIONS on Electronics,
vol. E106-C, no. 6, pp. 214-219, June 2023, doi: 10.1587/transele.2022OMP0001.
Abstract: Improvement of the on/off ratio in organic field-effect transistors through the use of pentacene and molybdenum trioxide (MoO3) layers was attempted via the preparation of a discontinuous MoO3 layer using a mesh mask. We prepared three types of devices. Device A had a conventional top-contact structure with an n-type Si wafer and a 200-nm-thick SiO2 film onto which we deposited a 70-nm-thick pentacene film and a 30-nm-thick layer of Au top electrodes. Devices B and C had a similar structure to device A but received a continuous and a discontinuous MoO3 layer, respectively. The off current in Device B was remarkably high; in contrast, the off current in Device C was reduced and dependent on the separation of the MoO3 layer. It was deduced that the high resistance of the area without MoO3 contributed to the reduced off current.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2022OMP0001/_p
Salinan
@ARTICLE{e106-c_6_214,
author={Takumi KOBAYASHI, Masahiro MINAGAWA, Akira BABA, Keizo KATO, Kazunari SHINBO, },
journal={IEICE TRANSACTIONS on Electronics},
title={On/Off Ratio of a Pentacene Field-Effect Transistor with a Discontinuous MoO3 Layer},
year={2023},
volume={E106-C},
number={6},
pages={214-219},
abstract={Improvement of the on/off ratio in organic field-effect transistors through the use of pentacene and molybdenum trioxide (MoO3) layers was attempted via the preparation of a discontinuous MoO3 layer using a mesh mask. We prepared three types of devices. Device A had a conventional top-contact structure with an n-type Si wafer and a 200-nm-thick SiO2 film onto which we deposited a 70-nm-thick pentacene film and a 30-nm-thick layer of Au top electrodes. Devices B and C had a similar structure to device A but received a continuous and a discontinuous MoO3 layer, respectively. The off current in Device B was remarkably high; in contrast, the off current in Device C was reduced and dependent on the separation of the MoO3 layer. It was deduced that the high resistance of the area without MoO3 contributed to the reduced off current.},
keywords={},
doi={10.1587/transele.2022OMP0001},
ISSN={1745-1353},
month={June},}
Salinan
TY - JOUR
TI - On/Off Ratio of a Pentacene Field-Effect Transistor with a Discontinuous MoO3 Layer
T2 - IEICE TRANSACTIONS on Electronics
SP - 214
EP - 219
AU - Takumi KOBAYASHI
AU - Masahiro MINAGAWA
AU - Akira BABA
AU - Keizo KATO
AU - Kazunari SHINBO
PY - 2023
DO - 10.1587/transele.2022OMP0001
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E106-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2023
AB - Improvement of the on/off ratio in organic field-effect transistors through the use of pentacene and molybdenum trioxide (MoO3) layers was attempted via the preparation of a discontinuous MoO3 layer using a mesh mask. We prepared three types of devices. Device A had a conventional top-contact structure with an n-type Si wafer and a 200-nm-thick SiO2 film onto which we deposited a 70-nm-thick pentacene film and a 30-nm-thick layer of Au top electrodes. Devices B and C had a similar structure to device A but received a continuous and a discontinuous MoO3 layer, respectively. The off current in Device B was remarkably high; in contrast, the off current in Device C was reduced and dependent on the separation of the MoO3 layer. It was deduced that the high resistance of the area without MoO3 contributed to the reduced off current.
ER -