The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
pandangan teks lengkap
79
Fotodiod runtuhan silikon kuadran (APD) telah direka oleh proses CMOS 0.18µm standard, dan dicirikan pada panjang gelombang 405nm untuk aplikasi Blu-ray. Saiz setiap elemen APD ialah 50×50µm2. Arus gelap ialah 10pA pada voltan pincang rendah, dan crosstalk rendah kira-kira -80dB antara elemen APD bersebelahan telah dicapai. Walaupun respontiviti kurang daripada 0.1A/W pada voltan pincang rendah, respontiviti dipertingkatkan kepada lebih daripada 1A/W pada voltan pincang kurang daripada 10V disebabkan oleh penguatan runtuhan salji. Lebar lebar 1.5GHz yang luas dicapai dengan respontiviti lebih daripada 1A/W, yang dihadkan oleh kapasitansi APD. Kami percaya bahawa APD kuadran yang direka adalah fotodiod yang menjanjikan untuk sistem Blu-ray berbilang lapisan.
Koichi IIYAMA
Kanazawa University
Takeo MARUYAMA
Kanazawa University
Ryoichi GYOBU
Kanazawa University
Takuya HISHIKI
Kanazawa University
Toshiyuki SHIMOTORI
Kanazawa University
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Salinan
Koichi IIYAMA, Takeo MARUYAMA, Ryoichi GYOBU, Takuya HISHIKI, Toshiyuki SHIMOTORI, "High Speed and High Responsivity Avalanche Photodiode Fabricated by Standard CMOS Process in Blue Wavelength Region" in IEICE TRANSACTIONS on Electronics,
vol. E101-C, no. 7, pp. 574-580, July 2018, doi: 10.1587/transele.E101.C.574.
Abstract: Quadrant silicon avalanche photodiodes (APDs) were fabricated by standard 0.18µm CMOS process, and were characterized at 405nm wavelength for Blu-ray applications. The size of each APD element is 50×50µm2. The dark current was 10pA at low bias voltage, and low crosstalk of about -80dB between adjacent APD elements was achieved. Although the responsivity is less than 0.1A/W at low bias voltage, the responsivity is enhanced to more than 1A/W at less than 10V bias voltage due to avalanche amplification. The wide bandwidth of 1.5GHz was achieved with the responsivity of more than 1A/W, which is limited by the capacitance of the APD. We believe that the fabricated quadrant APD is a promising photodiode for multi-layer Blu-ray system.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E101.C.574/_p
Salinan
@ARTICLE{e101-c_7_574,
author={Koichi IIYAMA, Takeo MARUYAMA, Ryoichi GYOBU, Takuya HISHIKI, Toshiyuki SHIMOTORI, },
journal={IEICE TRANSACTIONS on Electronics},
title={High Speed and High Responsivity Avalanche Photodiode Fabricated by Standard CMOS Process in Blue Wavelength Region},
year={2018},
volume={E101-C},
number={7},
pages={574-580},
abstract={Quadrant silicon avalanche photodiodes (APDs) were fabricated by standard 0.18µm CMOS process, and were characterized at 405nm wavelength for Blu-ray applications. The size of each APD element is 50×50µm2. The dark current was 10pA at low bias voltage, and low crosstalk of about -80dB between adjacent APD elements was achieved. Although the responsivity is less than 0.1A/W at low bias voltage, the responsivity is enhanced to more than 1A/W at less than 10V bias voltage due to avalanche amplification. The wide bandwidth of 1.5GHz was achieved with the responsivity of more than 1A/W, which is limited by the capacitance of the APD. We believe that the fabricated quadrant APD is a promising photodiode for multi-layer Blu-ray system.},
keywords={},
doi={10.1587/transele.E101.C.574},
ISSN={1745-1353},
month={July},}
Salinan
TY - JOUR
TI - High Speed and High Responsivity Avalanche Photodiode Fabricated by Standard CMOS Process in Blue Wavelength Region
T2 - IEICE TRANSACTIONS on Electronics
SP - 574
EP - 580
AU - Koichi IIYAMA
AU - Takeo MARUYAMA
AU - Ryoichi GYOBU
AU - Takuya HISHIKI
AU - Toshiyuki SHIMOTORI
PY - 2018
DO - 10.1587/transele.E101.C.574
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E101-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2018
AB - Quadrant silicon avalanche photodiodes (APDs) were fabricated by standard 0.18µm CMOS process, and were characterized at 405nm wavelength for Blu-ray applications. The size of each APD element is 50×50µm2. The dark current was 10pA at low bias voltage, and low crosstalk of about -80dB between adjacent APD elements was achieved. Although the responsivity is less than 0.1A/W at low bias voltage, the responsivity is enhanced to more than 1A/W at less than 10V bias voltage due to avalanche amplification. The wide bandwidth of 1.5GHz was achieved with the responsivity of more than 1A/W, which is limited by the capacitance of the APD. We believe that the fabricated quadrant APD is a promising photodiode for multi-layer Blu-ray system.
ER -