The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Permukaan Ge telah disinari oleh Ar+ ion pada 600 eV dengan dan tanpa bekalan serentak Ge atau Al pada suhu bilik. Permukaan yang disinari ion tanpa sebarang bekalan logam serentak dicirikan oleh tonjolan kon yang diedarkan padat. Sebaliknya, pelbagai jenis struktur nano telah terbentuk pada permukaan Ge yang disinari ion dengan bekalan logam serentak. Ia menampilkan kon dan tali pinggang nano dengan bahagian atas yang diratakan untuk kes bekalan Ge, manakala ia dicirikan oleh nanorod, tali pinggang nano dan dinding nano untuk kes bekalan Al. Sangat menarik, kebanyakan nanorod dan nanobelt yang terbentuk dengan bekalan Al mempunyai struktur kesesakan. Oleh itu, struktur nano Ge boleh dikawal dalam morfologi mengikut spesies dan jumlah logam yang dibekalkan secara serentak.
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Salinan
Ako MIYAWAKI, Toshiaki HAYASHI, Masaki TANEMURA, Yasuhiko HAYASHI, Tomoharu TOKUNAGA, Tetsuo SOGA, "Low-Temperature Fabrication of Ion-Induced Ge Nanostructures: Effect of Simultaneous Al Supply" in IEICE TRANSACTIONS on Electronics,
vol. E92-C, no. 12, pp. 1417-1420, December 2009, doi: 10.1587/transele.E92.C.1417.
Abstract: Ge surfaces were irradiated by Ar+ ions at 600 eV with and without simultaneous supply of Ge or Al at room temperature. The surfaces ion-irradiated without any simultaneous metal supply were characterized by densely distributed conical protrusions. By contrast, various kinds of nanostructures were formed on the Ge surfaces ion-irradiated with a simultaneous metal supply. They featured cones and nanobelts with a flattened top for Ge supply cases, whereas they were characterized by the nanorods, nanobelts and nanowalls for Al supply cases. Very interestingly, most of the nanorods and nanobelts formed with an Al supply possessed a bottleneck structure. Thus, the Ge nanostructures were controllable in morphology by species and amount of simultaneously supplied metals.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E92.C.1417/_p
Salinan
@ARTICLE{e92-c_12_1417,
author={Ako MIYAWAKI, Toshiaki HAYASHI, Masaki TANEMURA, Yasuhiko HAYASHI, Tomoharu TOKUNAGA, Tetsuo SOGA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Low-Temperature Fabrication of Ion-Induced Ge Nanostructures: Effect of Simultaneous Al Supply},
year={2009},
volume={E92-C},
number={12},
pages={1417-1420},
abstract={Ge surfaces were irradiated by Ar+ ions at 600 eV with and without simultaneous supply of Ge or Al at room temperature. The surfaces ion-irradiated without any simultaneous metal supply were characterized by densely distributed conical protrusions. By contrast, various kinds of nanostructures were formed on the Ge surfaces ion-irradiated with a simultaneous metal supply. They featured cones and nanobelts with a flattened top for Ge supply cases, whereas they were characterized by the nanorods, nanobelts and nanowalls for Al supply cases. Very interestingly, most of the nanorods and nanobelts formed with an Al supply possessed a bottleneck structure. Thus, the Ge nanostructures were controllable in morphology by species and amount of simultaneously supplied metals.},
keywords={},
doi={10.1587/transele.E92.C.1417},
ISSN={1745-1353},
month={December},}
Salinan
TY - JOUR
TI - Low-Temperature Fabrication of Ion-Induced Ge Nanostructures: Effect of Simultaneous Al Supply
T2 - IEICE TRANSACTIONS on Electronics
SP - 1417
EP - 1420
AU - Ako MIYAWAKI
AU - Toshiaki HAYASHI
AU - Masaki TANEMURA
AU - Yasuhiko HAYASHI
AU - Tomoharu TOKUNAGA
AU - Tetsuo SOGA
PY - 2009
DO - 10.1587/transele.E92.C.1417
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E92-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 2009
AB - Ge surfaces were irradiated by Ar+ ions at 600 eV with and without simultaneous supply of Ge or Al at room temperature. The surfaces ion-irradiated without any simultaneous metal supply were characterized by densely distributed conical protrusions. By contrast, various kinds of nanostructures were formed on the Ge surfaces ion-irradiated with a simultaneous metal supply. They featured cones and nanobelts with a flattened top for Ge supply cases, whereas they were characterized by the nanorods, nanobelts and nanowalls for Al supply cases. Very interestingly, most of the nanorods and nanobelts formed with an Al supply possessed a bottleneck structure. Thus, the Ge nanostructures were controllable in morphology by species and amount of simultaneously supplied metals.
ER -