The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
pandangan teks lengkap
75
Kami telah mencadangkan dan berjaya menunjukkan kaedah dua langkah untuk menyetempatkan kecacatan pada cip LSI. Langkah pertama adalah sama seperti pengimejan laser-SQUID (L-SQUID) konvensional di mana SQUID dan pancaran laser ditetapkan semasa pengimbasan cip LSI. Langkah kedua ialah pengimejan L-SQUID baharu di mana pancaran laser dikekalkan pada titik, terletak dalam keputusan langkah pertama, semasa pengimbasan SQUID. Dalam langkah kedua, saiz SQUID (Aeff) dan jarak antara SQUID dan cip LSI (ΔZ) adalah faktor utama yang mengehadkan resolusi spatial. Untuk menambah baik resolusi spatial, kami telah membangunkan mikro-SQUID dan ruang vakum yang menempatkan kedua-dua mikro-SQUID dan cip LSI. The Aeff daripada mikro-SOtong adalah seribu daripada sotong konvensional. Nilai minimum ΔZ telah berjaya dikurangkan kepada 25 µm dengan menetapkan kedua-dua mikro-SQUID dan cip LSI dalam kebuk vakum yang sama. Resolusi spatial dalam langkah kedua ditunjukkan sebagai 53 µm. Demonstrasi penyetempatan kecacatan rumit sebenar telah berjaya, dan keputusan ini menunjukkan bahawa kaedah penyetempatan dua langkah berguna untuk analisis kegagalan LSI.
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Salinan
Kiyoshi NIKAWA, Shouji INOUE, Tatsuoki NAGAISHI, Toru MATSUMOTO, Katsuyoshi MIURA, Koji NAKAMAE, "New Approach of Laser-SQUID Microscopy to LSI Failure Analysis" in IEICE TRANSACTIONS on Electronics,
vol. E92-C, no. 3, pp. 327-333, March 2009, doi: 10.1587/transele.E92.C.327.
Abstract: We have proposed and successfully demonstrated a two step method for localizing defects on an LSI chip. The first step is the same as a conventional laser-SQUID (L-SQUID) imaging where a SQUID and a laser beam are fixed during LSI chip scanning. The second step is a new L-SQUID imaging where a laser beam is stayed at the point, located in the first step results, during SQUID scanning. In the second step, a SQUID size (Aeff) and the distance between the SQUID and the LSI chip (ΔZ) are key factors limiting spatial resolution. In order to improve the spatial resolution, we have developed a micro-SQUID and the vacuum chamber housing both the micro-SQUID and the LSI chip. The Aeff of the micro-SQUID is a thousand of that of a conventional SQUID. The minimum value of ΔZ was successfully reduced to 25 µm by setting both the micro-SQUID and an LSI chip in the same vacuum chamber. The spatial resolution in the second step was shown to be 53 µm. Demonstration of actual complicated defects localization was succeeded, and this result suggests that the two step localization method is useful for LSI failure analysis.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E92.C.327/_p
Salinan
@ARTICLE{e92-c_3_327,
author={Kiyoshi NIKAWA, Shouji INOUE, Tatsuoki NAGAISHI, Toru MATSUMOTO, Katsuyoshi MIURA, Koji NAKAMAE, },
journal={IEICE TRANSACTIONS on Electronics},
title={New Approach of Laser-SQUID Microscopy to LSI Failure Analysis},
year={2009},
volume={E92-C},
number={3},
pages={327-333},
abstract={We have proposed and successfully demonstrated a two step method for localizing defects on an LSI chip. The first step is the same as a conventional laser-SQUID (L-SQUID) imaging where a SQUID and a laser beam are fixed during LSI chip scanning. The second step is a new L-SQUID imaging where a laser beam is stayed at the point, located in the first step results, during SQUID scanning. In the second step, a SQUID size (Aeff) and the distance between the SQUID and the LSI chip (ΔZ) are key factors limiting spatial resolution. In order to improve the spatial resolution, we have developed a micro-SQUID and the vacuum chamber housing both the micro-SQUID and the LSI chip. The Aeff of the micro-SQUID is a thousand of that of a conventional SQUID. The minimum value of ΔZ was successfully reduced to 25 µm by setting both the micro-SQUID and an LSI chip in the same vacuum chamber. The spatial resolution in the second step was shown to be 53 µm. Demonstration of actual complicated defects localization was succeeded, and this result suggests that the two step localization method is useful for LSI failure analysis.},
keywords={},
doi={10.1587/transele.E92.C.327},
ISSN={1745-1353},
month={March},}
Salinan
TY - JOUR
TI - New Approach of Laser-SQUID Microscopy to LSI Failure Analysis
T2 - IEICE TRANSACTIONS on Electronics
SP - 327
EP - 333
AU - Kiyoshi NIKAWA
AU - Shouji INOUE
AU - Tatsuoki NAGAISHI
AU - Toru MATSUMOTO
AU - Katsuyoshi MIURA
AU - Koji NAKAMAE
PY - 2009
DO - 10.1587/transele.E92.C.327
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E92-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 2009
AB - We have proposed and successfully demonstrated a two step method for localizing defects on an LSI chip. The first step is the same as a conventional laser-SQUID (L-SQUID) imaging where a SQUID and a laser beam are fixed during LSI chip scanning. The second step is a new L-SQUID imaging where a laser beam is stayed at the point, located in the first step results, during SQUID scanning. In the second step, a SQUID size (Aeff) and the distance between the SQUID and the LSI chip (ΔZ) are key factors limiting spatial resolution. In order to improve the spatial resolution, we have developed a micro-SQUID and the vacuum chamber housing both the micro-SQUID and the LSI chip. The Aeff of the micro-SQUID is a thousand of that of a conventional SQUID. The minimum value of ΔZ was successfully reduced to 25 µm by setting both the micro-SQUID and an LSI chip in the same vacuum chamber. The spatial resolution in the second step was shown to be 53 µm. Demonstration of actual complicated defects localization was succeeded, and this result suggests that the two step localization method is useful for LSI failure analysis.
ER -