The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Kertas kerja menunjukkan litar rintangan pembezaan negatif (NDR) dua puncak novel yang menggabungkan transistor kesan medan (MOS) logam-oksida-semikonduktor berasaskan SiGe dan transistor bipolar heterojunction (HBT) berasaskan SiGe. Berbanding dengan diod terowong resonans, MOS-HBT-NDR mempunyai dua kelebihan utama dalam reka bentuk litar kami. Salah satunya ialah pembikinan aplikasi berasaskan MOS-HBT-NDR ini boleh dilaksanakan sepenuhnya oleh proses BiCMOS standard. Satu lagi ialah arus puncak boleh diselaraskan dengan berkesan oleh voltan terkawal. Nisbah arus puncak ke lembah adalah kira-kira 4136 dan 9.4 pada puncak pertama dan kedua masing-masing. Ia sangat berguna untuk pereka litar untuk mempertimbangkan aplikasi berasaskan NDR.
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Salinan
Dong-Shong LIANG, Kwang-Jow GAN, Cheng-Chi TAI, Cher-Shiung TSAI, "Standard BiCMOS Implementation of a Two-Peak Negative Differential Resistance Circuit with High and Adjustable Peak-to-Valley Current Ratio" in IEICE TRANSACTIONS on Electronics,
vol. E92-C, no. 5, pp. 635-638, May 2009, doi: 10.1587/transele.E92.C.635.
Abstract: The paper demonstrates a novel two-peak negative differential resistance (NDR) circuit combining Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and SiGe-based heterojunction bipolar transistor (HBT). Compared to the resonant-tunneling diode, MOS-HBT-NDR has two major advantages in our circuit design. One is that the fabrication of this MOS-HBT-NDR-based application can be fully implemented by the standard BiCMOS process. Another is that the peak current can be effectively adjusted by the controlled voltage. The peak-to-valley current ratio is about 4136 and 9.4 at the first and second peak respectively. It is very useful for circuit designers to consider the NDR-based applications.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E92.C.635/_p
Salinan
@ARTICLE{e92-c_5_635,
author={Dong-Shong LIANG, Kwang-Jow GAN, Cheng-Chi TAI, Cher-Shiung TSAI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Standard BiCMOS Implementation of a Two-Peak Negative Differential Resistance Circuit with High and Adjustable Peak-to-Valley Current Ratio},
year={2009},
volume={E92-C},
number={5},
pages={635-638},
abstract={The paper demonstrates a novel two-peak negative differential resistance (NDR) circuit combining Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and SiGe-based heterojunction bipolar transistor (HBT). Compared to the resonant-tunneling diode, MOS-HBT-NDR has two major advantages in our circuit design. One is that the fabrication of this MOS-HBT-NDR-based application can be fully implemented by the standard BiCMOS process. Another is that the peak current can be effectively adjusted by the controlled voltage. The peak-to-valley current ratio is about 4136 and 9.4 at the first and second peak respectively. It is very useful for circuit designers to consider the NDR-based applications.},
keywords={},
doi={10.1587/transele.E92.C.635},
ISSN={1745-1353},
month={May},}
Salinan
TY - JOUR
TI - Standard BiCMOS Implementation of a Two-Peak Negative Differential Resistance Circuit with High and Adjustable Peak-to-Valley Current Ratio
T2 - IEICE TRANSACTIONS on Electronics
SP - 635
EP - 638
AU - Dong-Shong LIANG
AU - Kwang-Jow GAN
AU - Cheng-Chi TAI
AU - Cher-Shiung TSAI
PY - 2009
DO - 10.1587/transele.E92.C.635
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E92-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2009
AB - The paper demonstrates a novel two-peak negative differential resistance (NDR) circuit combining Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and SiGe-based heterojunction bipolar transistor (HBT). Compared to the resonant-tunneling diode, MOS-HBT-NDR has two major advantages in our circuit design. One is that the fabrication of this MOS-HBT-NDR-based application can be fully implemented by the standard BiCMOS process. Another is that the peak current can be effectively adjusted by the controlled voltage. The peak-to-valley current ratio is about 4136 and 9.4 at the first and second peak respectively. It is very useful for circuit designers to consider the NDR-based applications.
ER -