The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Kertas kerja ini mencadangkan konsep konfigurasi serentak peranti mikromesin frekuensi radio (RF) dan sistem mikro-elektro-mekanikal (MEMS). Peranti ini direka pada struktur dielektrik-udara-logam (DAM) yang asalnya dibangunkan yang sesuai untuk fabrikasi pelbagai peranti bersama-sama. Struktur DAM boleh mencadangkan elemen berongga yang disokong membran yang tertanam dalam wafer silikon dengan mencipta rongga di dalamnya. Walaupun peranti mempunyai kedalaman rongga yang berbeza, ia diproses dengan hanya satu pelanarisasi. Di samping itu, oleh kerana struktur hanya berfungsi dari bahagian hadapan wafer, tiada proses membalik serta tiada proses ikatan wafer diperlukan, dan hakikatnya merealisasikan penyepaduan serentak kos rendah. Sebagai aplikasi struktur DAM, pandu gelombang co-planar yang dibumikan berongga, litar elemen tergumpal dan suis MEMS ditunjukkan.
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Salinan
Tamotsu NISHINO, Masatake HANGAI, Yukihisa YOSHIDA, Sang-Seok LEE, "Micromachined RF Devices for Concurrent Integration on Dielectric-Air-Metal Structures" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 7, pp. 1111-1118, July 2010, doi: 10.1587/transele.E93.C.1111.
Abstract: This paper proposes a concept of a concurrent configuration of radio-frequency (RF) micromachined and micro-electro-mechanical-system (MEMS) devices. The devices are fabricated on an originally developed dielectric-air-metal (DAM) structure that suits for fabrication of various devices all together. The DAM structure can propose membrane-supported hollow elements embedded in a silicon wafer by creating cavities in it. Even though the devices have different cavity depths, they are processed by just one planarization. In addition, since the structure is worked only from the front side of the wafer, no flipping process as well as no wafer bonding process is required, and the fact realizes low-cost concurrent integration. As applications of the DAM structures, a hollow grounded co-planar waveguide, lumped element circuitries, and an MEMS switch are demonstrated.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.1111/_p
Salinan
@ARTICLE{e93-c_7_1111,
author={Tamotsu NISHINO, Masatake HANGAI, Yukihisa YOSHIDA, Sang-Seok LEE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Micromachined RF Devices for Concurrent Integration on Dielectric-Air-Metal Structures},
year={2010},
volume={E93-C},
number={7},
pages={1111-1118},
abstract={This paper proposes a concept of a concurrent configuration of radio-frequency (RF) micromachined and micro-electro-mechanical-system (MEMS) devices. The devices are fabricated on an originally developed dielectric-air-metal (DAM) structure that suits for fabrication of various devices all together. The DAM structure can propose membrane-supported hollow elements embedded in a silicon wafer by creating cavities in it. Even though the devices have different cavity depths, they are processed by just one planarization. In addition, since the structure is worked only from the front side of the wafer, no flipping process as well as no wafer bonding process is required, and the fact realizes low-cost concurrent integration. As applications of the DAM structures, a hollow grounded co-planar waveguide, lumped element circuitries, and an MEMS switch are demonstrated.},
keywords={},
doi={10.1587/transele.E93.C.1111},
ISSN={1745-1353},
month={July},}
Salinan
TY - JOUR
TI - Micromachined RF Devices for Concurrent Integration on Dielectric-Air-Metal Structures
T2 - IEICE TRANSACTIONS on Electronics
SP - 1111
EP - 1118
AU - Tamotsu NISHINO
AU - Masatake HANGAI
AU - Yukihisa YOSHIDA
AU - Sang-Seok LEE
PY - 2010
DO - 10.1587/transele.E93.C.1111
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2010
AB - This paper proposes a concept of a concurrent configuration of radio-frequency (RF) micromachined and micro-electro-mechanical-system (MEMS) devices. The devices are fabricated on an originally developed dielectric-air-metal (DAM) structure that suits for fabrication of various devices all together. The DAM structure can propose membrane-supported hollow elements embedded in a silicon wafer by creating cavities in it. Even though the devices have different cavity depths, they are processed by just one planarization. In addition, since the structure is worked only from the front side of the wafer, no flipping process as well as no wafer bonding process is required, and the fact realizes low-cost concurrent integration. As applications of the DAM structures, a hollow grounded co-planar waveguide, lumped element circuitries, and an MEMS switch are demonstrated.
ER -