The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Runtuhan longkang dalam AlGaN/GaN HFET dianalisis menggunakan simulator peranti dua dimensi. Tepu dua langkah diperoleh, dengan mengandaikan keadaan permukaan jenis perangkap lubang pada permukaan AlGaN dan kawasan suntikan cas negatif pendek di bahagian longkang pintu pagar. Disebabkan oleh potensi elektrik permukaan yang disematkan oleh perangkap permukaan, kawasan yang disuntik cas negatif membentuk potensi malar seperti di kawasan pintu logam dan ia bertindak sebagai FET dengan pintu maya. Profil kepekatan elektron mendedahkan bahawa ketepuan pertama berlaku dengan picit-off di rantau pintu maya dan ketepuan kedua berlaku dengan pinch-off di rantau pintu logam. Disebabkan oleh kesan saluran pendek FET get maya, arus tepu meningkat sehingga akhirnya mencapai arus tepu FET get logam intrinsik. Arus runtuh dengan degradasi arus pada voltan lutut dalam I-V ciri-ciri boleh dijelaskan dengan pembentukan gerbang maya.
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Salinan
Yusuke IKAWA, Yorihide YUASA, Cheng-Yu HU, Jin-Ping AO, Yasuo OHNO, "2D Device Simulation of AlGaN/GaN HFET Current Collapse Caused by Surface Negative Charge Injection" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 8, pp. 1218-1224, August 2010, doi: 10.1587/transele.E93.C.1218.
Abstract: Drain collapse in AlGaN/GaN HFET is analyzed using a two-dimensional device simulator. Two-step saturation is obtained, assuming hole-trap type surface states on the AlGaN surface and a short negative-charge-injected region at the drain side of the gate. Due to the surface electric potential pinning by the surface traps, the negative charge injected region forms a constant potential like in a metal gate region and it acts as an FET with a virtual gate. The electron concentration profile reveals that the first saturation occurs by pinch-off in the virtual gate region and the second saturation occurs by the pinch-off in the metal gate region. Due to the short-channel effect of the virtual gate FET, the saturation current increases until it finally reaches the saturation current of the intrinsic metal gate FET. Current collapses with current degradation at the knee voltage in the I-V characteristics can be explained by the formation of the virtual gate.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.1218/_p
Salinan
@ARTICLE{e93-c_8_1218,
author={Yusuke IKAWA, Yorihide YUASA, Cheng-Yu HU, Jin-Ping AO, Yasuo OHNO, },
journal={IEICE TRANSACTIONS on Electronics},
title={2D Device Simulation of AlGaN/GaN HFET Current Collapse Caused by Surface Negative Charge Injection},
year={2010},
volume={E93-C},
number={8},
pages={1218-1224},
abstract={Drain collapse in AlGaN/GaN HFET is analyzed using a two-dimensional device simulator. Two-step saturation is obtained, assuming hole-trap type surface states on the AlGaN surface and a short negative-charge-injected region at the drain side of the gate. Due to the surface electric potential pinning by the surface traps, the negative charge injected region forms a constant potential like in a metal gate region and it acts as an FET with a virtual gate. The electron concentration profile reveals that the first saturation occurs by pinch-off in the virtual gate region and the second saturation occurs by the pinch-off in the metal gate region. Due to the short-channel effect of the virtual gate FET, the saturation current increases until it finally reaches the saturation current of the intrinsic metal gate FET. Current collapses with current degradation at the knee voltage in the I-V characteristics can be explained by the formation of the virtual gate.},
keywords={},
doi={10.1587/transele.E93.C.1218},
ISSN={1745-1353},
month={August},}
Salinan
TY - JOUR
TI - 2D Device Simulation of AlGaN/GaN HFET Current Collapse Caused by Surface Negative Charge Injection
T2 - IEICE TRANSACTIONS on Electronics
SP - 1218
EP - 1224
AU - Yusuke IKAWA
AU - Yorihide YUASA
AU - Cheng-Yu HU
AU - Jin-Ping AO
AU - Yasuo OHNO
PY - 2010
DO - 10.1587/transele.E93.C.1218
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2010
AB - Drain collapse in AlGaN/GaN HFET is analyzed using a two-dimensional device simulator. Two-step saturation is obtained, assuming hole-trap type surface states on the AlGaN surface and a short negative-charge-injected region at the drain side of the gate. Due to the surface electric potential pinning by the surface traps, the negative charge injected region forms a constant potential like in a metal gate region and it acts as an FET with a virtual gate. The electron concentration profile reveals that the first saturation occurs by pinch-off in the virtual gate region and the second saturation occurs by the pinch-off in the metal gate region. Due to the short-channel effect of the virtual gate FET, the saturation current increases until it finally reaches the saturation current of the intrinsic metal gate FET. Current collapses with current degradation at the knee voltage in the I-V characteristics can be explained by the formation of the virtual gate.
ER -