The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
E-band low-noise amplifier (LNA) litar bersepadu gelombang milimeter monolitik (MMICs) telah dibangunkan menggunakan pseudomorphic In0.75Ga0.25Seperti dalam0.52Al0.48Sebagai transistor mobiliti elektron tinggi (HEMT) dengan panjang get 50 nm. HEMT nanogate menunjukkan frekuensi ayunan maksimum (fmaks) sebanyak 550 GHz dan frekuensi potong keuntungan semasa (fT) sebanyak 450 GHz pada suhu bilik, yang merupakan demonstrasi percubaan pertama yang fmaks setinggi 550 GHz boleh dicapai dengan prosedur pintu ceruk satu langkah yang dipertingkatkan. Tambahan pula, menggunakan LNA-MMIC tiga peringkat dengan 50-nm-gate InGaAs/InAlAs HEMTs, kami mencapai angka hingar minimum 2.3 dB dengan keuntungan yang berkaitan sebanyak 20.6 dB pada 79 GHz.
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Salinan
Issei WATANABE, Akira ENDOH, Takashi MIMURA, Toshiaki MATSUI, "E-Band Low-Noise Amplifier MMICs Using Nanogate InGaAs/InAlAs HEMT Technology" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 8, pp. 1251-1257, August 2010, doi: 10.1587/transele.E93.C.1251.
Abstract: E-band low-noise amplifier (LNA) monolithic millimeter-wave integrated circuits (MMICs) were developed using pseudomorphic In0.75Ga0.25As/In0.52Al0.48As high electron mobility transistors (HEMTs) with a gate length of 50 nm. The nanogate HEMTs demonstrated a maximum oscillation frequency (fmax) of 550 GHz and a current-gain cutoff frequency (fT) of 450 GHz at room temperature, which is first experimental demonstration that fmax as high as 550 GHz are achievable with the improved one-step-recessed gate procedure. Furthermore, using a three-stage LNA-MMIC with 50-nm-gate InGaAs/InAlAs HEMTs, we achieved a minimum noise figure of 2.3 dB with an associated gain of 20.6 dB at 79 GHz.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.1251/_p
Salinan
@ARTICLE{e93-c_8_1251,
author={Issei WATANABE, Akira ENDOH, Takashi MIMURA, Toshiaki MATSUI, },
journal={IEICE TRANSACTIONS on Electronics},
title={E-Band Low-Noise Amplifier MMICs Using Nanogate InGaAs/InAlAs HEMT Technology},
year={2010},
volume={E93-C},
number={8},
pages={1251-1257},
abstract={E-band low-noise amplifier (LNA) monolithic millimeter-wave integrated circuits (MMICs) were developed using pseudomorphic In0.75Ga0.25As/In0.52Al0.48As high electron mobility transistors (HEMTs) with a gate length of 50 nm. The nanogate HEMTs demonstrated a maximum oscillation frequency (fmax) of 550 GHz and a current-gain cutoff frequency (fT) of 450 GHz at room temperature, which is first experimental demonstration that fmax as high as 550 GHz are achievable with the improved one-step-recessed gate procedure. Furthermore, using a three-stage LNA-MMIC with 50-nm-gate InGaAs/InAlAs HEMTs, we achieved a minimum noise figure of 2.3 dB with an associated gain of 20.6 dB at 79 GHz.},
keywords={},
doi={10.1587/transele.E93.C.1251},
ISSN={1745-1353},
month={August},}
Salinan
TY - JOUR
TI - E-Band Low-Noise Amplifier MMICs Using Nanogate InGaAs/InAlAs HEMT Technology
T2 - IEICE TRANSACTIONS on Electronics
SP - 1251
EP - 1257
AU - Issei WATANABE
AU - Akira ENDOH
AU - Takashi MIMURA
AU - Toshiaki MATSUI
PY - 2010
DO - 10.1587/transele.E93.C.1251
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2010
AB - E-band low-noise amplifier (LNA) monolithic millimeter-wave integrated circuits (MMICs) were developed using pseudomorphic In0.75Ga0.25As/In0.52Al0.48As high electron mobility transistors (HEMTs) with a gate length of 50 nm. The nanogate HEMTs demonstrated a maximum oscillation frequency (fmax) of 550 GHz and a current-gain cutoff frequency (fT) of 450 GHz at room temperature, which is first experimental demonstration that fmax as high as 550 GHz are achievable with the improved one-step-recessed gate procedure. Furthermore, using a three-stage LNA-MMIC with 50-nm-gate InGaAs/InAlAs HEMTs, we achieved a minimum noise figure of 2.3 dB with an associated gain of 20.6 dB at 79 GHz.
ER -