The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Sifat elektrik transistor filem nipis poli-Si (TFT) menggunakan penyepuhlindapan terma pantas dengan pelbagai ketebalan oksida pintu telah dikaji dalam kerja ini. Didapati bahawa ciri-ciri elektrik Poly-Si TFT dengan ketebalan pintu oksida paling nipis selepas rawatan RTA menunjukkan peningkatan prestasi terbesar berbanding TFT dengan oksida tebal hasil daripada peningkatan jumlah tergabung nitrogen dan oksigen. Oleh itu, kesan gabungan boleh mengekalkan kelebihan dan mengelakkan keburukan oksida yang dikecilkan, yang sesuai untuk pengeluaran besar-besaran paparan kecil hingga sederhana.
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Salinan
Ching-Lin FAN, Yi-Yan LIN, Yan-Hang YANG, Hung-Che CHEN, "Effects of Rapid Thermal Annealing on Poly-Si TFT with Different Gate Oxide Thickness" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 1, pp. 151-153, January 2010, doi: 10.1587/transele.E93.C.151.
Abstract: The electrical properties of poly-Si thin film transistors (TFTs) using rapid thermal annealing with various gate oxide thicknesses were studied in this work. It was found that Poly-Si TFT electrical characteristics with the thinnest gate oxide thickness after RTA treatment exhibits the largest performance improvement compared to TFT with thick oxide as a result of the increased incorporated amounts of the nitrogen and oxygen. Thus, the combined effects can maintain the advantages and avoid the disadvantages of scaled-down oxide, which is suitable for small-to-medium display mass production.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.151/_p
Salinan
@ARTICLE{e93-c_1_151,
author={Ching-Lin FAN, Yi-Yan LIN, Yan-Hang YANG, Hung-Che CHEN, },
journal={IEICE TRANSACTIONS on Electronics},
title={Effects of Rapid Thermal Annealing on Poly-Si TFT with Different Gate Oxide Thickness},
year={2010},
volume={E93-C},
number={1},
pages={151-153},
abstract={The electrical properties of poly-Si thin film transistors (TFTs) using rapid thermal annealing with various gate oxide thicknesses were studied in this work. It was found that Poly-Si TFT electrical characteristics with the thinnest gate oxide thickness after RTA treatment exhibits the largest performance improvement compared to TFT with thick oxide as a result of the increased incorporated amounts of the nitrogen and oxygen. Thus, the combined effects can maintain the advantages and avoid the disadvantages of scaled-down oxide, which is suitable for small-to-medium display mass production.},
keywords={},
doi={10.1587/transele.E93.C.151},
ISSN={1745-1353},
month={January},}
Salinan
TY - JOUR
TI - Effects of Rapid Thermal Annealing on Poly-Si TFT with Different Gate Oxide Thickness
T2 - IEICE TRANSACTIONS on Electronics
SP - 151
EP - 153
AU - Ching-Lin FAN
AU - Yi-Yan LIN
AU - Yan-Hang YANG
AU - Hung-Che CHEN
PY - 2010
DO - 10.1587/transele.E93.C.151
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 2010
AB - The electrical properties of poly-Si thin film transistors (TFTs) using rapid thermal annealing with various gate oxide thicknesses were studied in this work. It was found that Poly-Si TFT electrical characteristics with the thinnest gate oxide thickness after RTA treatment exhibits the largest performance improvement compared to TFT with thick oxide as a result of the increased incorporated amounts of the nitrogen and oxygen. Thus, the combined effects can maintain the advantages and avoid the disadvantages of scaled-down oxide, which is suitable for small-to-medium display mass production.
ER -