The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Kesan penyepuhlindapan hidrogen atom (AHA) pada sifat filem dan ciri elektrik transistor filem nipis organik pentacene (OTFT) disiasat. Tenaga permukaan SiO2 permukaan dan saiz butiran filem pentacene telah berkurangan dengan peningkatan masa rawatan AHA. Untuk masa rawatan 300s, filem pentacene menunjukkan orientasi (00l) dan (011') dan mobiliti pembawa yang tinggi walaupun terdapat butiran kristal yang kecil.
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Salinan
Akira HEYA, Naoto MATSUO, "Properties of SiO2 Surface and Pentacene OTFT Subjected to Atomic Hydrogen Annealing" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 10, pp. 1516-1517, October 2010, doi: 10.1587/transele.E93.C.1516.
Abstract: Effects of atomic hydrogen annealing (AHA) on the film properties and the electrical characteristics of pentacene organic thin-film transistors (OTFTs) are investigated. The surface energy of SiO2 surface and grain size of pentacene film were decreased with increasing AHA treatment time. For the treatment time of 300 s, pentacene film showed the (00l) and (011') orientation and high carrier mobility in spite of small crystal grain.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.1516/_p
Salinan
@ARTICLE{e93-c_10_1516,
author={Akira HEYA, Naoto MATSUO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Properties of SiO2 Surface and Pentacene OTFT Subjected to Atomic Hydrogen Annealing},
year={2010},
volume={E93-C},
number={10},
pages={1516-1517},
abstract={Effects of atomic hydrogen annealing (AHA) on the film properties and the electrical characteristics of pentacene organic thin-film transistors (OTFTs) are investigated. The surface energy of SiO2 surface and grain size of pentacene film were decreased with increasing AHA treatment time. For the treatment time of 300 s, pentacene film showed the (00l) and (011') orientation and high carrier mobility in spite of small crystal grain.},
keywords={},
doi={10.1587/transele.E93.C.1516},
ISSN={1745-1353},
month={October},}
Salinan
TY - JOUR
TI - Properties of SiO2 Surface and Pentacene OTFT Subjected to Atomic Hydrogen Annealing
T2 - IEICE TRANSACTIONS on Electronics
SP - 1516
EP - 1517
AU - Akira HEYA
AU - Naoto MATSUO
PY - 2010
DO - 10.1587/transele.E93.C.1516
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2010
AB - Effects of atomic hydrogen annealing (AHA) on the film properties and the electrical characteristics of pentacene organic thin-film transistors (OTFTs) are investigated. The surface energy of SiO2 surface and grain size of pentacene film were decreased with increasing AHA treatment time. For the treatment time of 300 s, pentacene film showed the (00l) and (011') orientation and high carrier mobility in spite of small crystal grain.
ER -