The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Penguat hingar rendah (LNA) CMOS degenerasi jalur lebar ultra-lebar (UWB) berasaskan maklum balas rintangan dengan terapung n-terminal telaga telah dicadangkan. Teknik maklum balas perintang menyediakan pemadanan input jalur lebar dengan jumlah kemerosotan hingar yang kecil dengan mengurangkan faktor kualiti litar resonan input. Selain itu, semua n-terminal telaga transistor RF tiga telaga disambungkan kepada voltan bekalan melalui perintang bernilai tinggi untuk mengurangkan kapasiti parasit yang tidak diingini, yang membawa kepada peningkatan prestasi RF LNA yang dicadangkan. LNA UWB yang dicadangkan dilaksanakan dalam teknologi CMOS 0.13 µm dan semua induktor disepadukan sepenuhnya dalam kerja ini. Hasil pengukuran menunjukkan keuntungan kuasa 10 dB daripada 3 GHz hingga 6 GHz, angka hingar minimum (maksimum) 2.3 dB (3.8 dB), kehilangan pulangan input lebih baik daripada -8 dB, dan input yang dirujuk IP3 sebanyak -7 dBm. Cip yang direka menggunakan hanya 5 mA daripada voltan bekalan 1.5 V.
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Salinan
Chang-Wan KIM, Bong-Soon KANG, "A 0.13-µm CMOS Ultra-Wideband Low-Noise Amplifier with High Impedance n-Well Terminals" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 10, pp. 1536-1539, October 2010, doi: 10.1587/transele.E93.C.1536.
Abstract: A resistive feedback-based inductive source degeneration ultra-wideband (UWB) CMOS low noise amplifier (LNA) with floating n-well terminals has been proposed. The resistive feedback technique provides wideband input matching with a small amount of noise degradation by reducing the quality factor of the input resonant circuit. In addition, all n-wells terminals of the triple-well RF transistors are connected to the supply voltage through high value resistors in order to reduce unwanted parasitic capacitances, leading to improvement of the RF performance of the proposed LNA. The proposed UWB LNA is implemented in 0.13 µm CMOS technology and all inductors are fully integrated in this work. Measurement results show a power gain of 10 dB from 3 GHz to 6 GHz, a minimum (maximum) noise figure of 2.3 dB (3.8 dB), an input return loss of better than -8 dB, and an input referred IP3 of -7 dBm. The fabricated chip consumes only 5 mA from a 1.5 V supply voltage.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.1536/_p
Salinan
@ARTICLE{e93-c_10_1536,
author={Chang-Wan KIM, Bong-Soon KANG, },
journal={IEICE TRANSACTIONS on Electronics},
title={A 0.13-µm CMOS Ultra-Wideband Low-Noise Amplifier with High Impedance n-Well Terminals},
year={2010},
volume={E93-C},
number={10},
pages={1536-1539},
abstract={A resistive feedback-based inductive source degeneration ultra-wideband (UWB) CMOS low noise amplifier (LNA) with floating n-well terminals has been proposed. The resistive feedback technique provides wideband input matching with a small amount of noise degradation by reducing the quality factor of the input resonant circuit. In addition, all n-wells terminals of the triple-well RF transistors are connected to the supply voltage through high value resistors in order to reduce unwanted parasitic capacitances, leading to improvement of the RF performance of the proposed LNA. The proposed UWB LNA is implemented in 0.13 µm CMOS technology and all inductors are fully integrated in this work. Measurement results show a power gain of 10 dB from 3 GHz to 6 GHz, a minimum (maximum) noise figure of 2.3 dB (3.8 dB), an input return loss of better than -8 dB, and an input referred IP3 of -7 dBm. The fabricated chip consumes only 5 mA from a 1.5 V supply voltage.},
keywords={},
doi={10.1587/transele.E93.C.1536},
ISSN={1745-1353},
month={October},}
Salinan
TY - JOUR
TI - A 0.13-µm CMOS Ultra-Wideband Low-Noise Amplifier with High Impedance n-Well Terminals
T2 - IEICE TRANSACTIONS on Electronics
SP - 1536
EP - 1539
AU - Chang-Wan KIM
AU - Bong-Soon KANG
PY - 2010
DO - 10.1587/transele.E93.C.1536
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2010
AB - A resistive feedback-based inductive source degeneration ultra-wideband (UWB) CMOS low noise amplifier (LNA) with floating n-well terminals has been proposed. The resistive feedback technique provides wideband input matching with a small amount of noise degradation by reducing the quality factor of the input resonant circuit. In addition, all n-wells terminals of the triple-well RF transistors are connected to the supply voltage through high value resistors in order to reduce unwanted parasitic capacitances, leading to improvement of the RF performance of the proposed LNA. The proposed UWB LNA is implemented in 0.13 µm CMOS technology and all inductors are fully integrated in this work. Measurement results show a power gain of 10 dB from 3 GHz to 6 GHz, a minimum (maximum) noise figure of 2.3 dB (3.8 dB), an input return loss of better than -8 dB, and an input referred IP3 of -7 dBm. The fabricated chip consumes only 5 mA from a 1.5 V supply voltage.
ER -