The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Semua MgB2 Persimpangan Josephson dengan halangan boron amorf telah dibuat pada substrat nilam satah C dengan menggunakan kaedah penyejatan bersama. Persimpangan menunjukkan arus Josephson dan ciri voltan arus tak linear yang kelihatan mencerminkan jurang tenaga superkonduktor. Arus genting diperhatikan apabila ketebalan boron amorf berada dalam julat 5 nm hingga 20 nm. Ketumpatan arus kritikal dianggarkan 0.4 A/cm2 kepada 450 A/cm2. Dengan memerhatikan pergantungan suhu arus kritikal kami mendapati bahawa simpang itu mempunyai suhu kritikal 10 K dan lapisan normal dalam struktur penghalangnya.
Naoki MITAMURA
Chikaze MARUYAMA
Hiroyuki AKAIKE
Akira FUJIMAKI
Rintaro ISHII
Yoshihiro NIIHARA
Michio NAITO
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Salinan
Naoki MITAMURA, Chikaze MARUYAMA, Hiroyuki AKAIKE, Akira FUJIMAKI, Rintaro ISHII, Yoshihiro NIIHARA, Michio NAITO, "All MgB2 Josephson Junctions with Amorphous Boron Barriers" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 4, pp. 468-472, April 2010, doi: 10.1587/transele.E93.C.468.
Abstract: All MgB2 Josephson junctions with amorphous boron barriers have been fabricated on C-plane sapphire substrates by using a co-evaporation method. The junctions showed Josephson currents and the nonlinear current-voltage characteristics which seem to reflect the superconducting energy gap. The critical current was observed when the thickness of the amorphous boron was in the range of 5 nm to 20 nm. The critical current density was estimated to be 0.4 A/cm2 to 450 A/cm2. By observing he temperature dependence of the critical current we found that the junction had a critical temperature of 10 K and a normal layer in its barrier structure.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.468/_p
Salinan
@ARTICLE{e93-c_4_468,
author={Naoki MITAMURA, Chikaze MARUYAMA, Hiroyuki AKAIKE, Akira FUJIMAKI, Rintaro ISHII, Yoshihiro NIIHARA, Michio NAITO, },
journal={IEICE TRANSACTIONS on Electronics},
title={All MgB2 Josephson Junctions with Amorphous Boron Barriers},
year={2010},
volume={E93-C},
number={4},
pages={468-472},
abstract={All MgB2 Josephson junctions with amorphous boron barriers have been fabricated on C-plane sapphire substrates by using a co-evaporation method. The junctions showed Josephson currents and the nonlinear current-voltage characteristics which seem to reflect the superconducting energy gap. The critical current was observed when the thickness of the amorphous boron was in the range of 5 nm to 20 nm. The critical current density was estimated to be 0.4 A/cm2 to 450 A/cm2. By observing he temperature dependence of the critical current we found that the junction had a critical temperature of 10 K and a normal layer in its barrier structure.},
keywords={},
doi={10.1587/transele.E93.C.468},
ISSN={1745-1353},
month={April},}
Salinan
TY - JOUR
TI - All MgB2 Josephson Junctions with Amorphous Boron Barriers
T2 - IEICE TRANSACTIONS on Electronics
SP - 468
EP - 472
AU - Naoki MITAMURA
AU - Chikaze MARUYAMA
AU - Hiroyuki AKAIKE
AU - Akira FUJIMAKI
AU - Rintaro ISHII
AU - Yoshihiro NIIHARA
AU - Michio NAITO
PY - 2010
DO - 10.1587/transele.E93.C.468
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2010
AB - All MgB2 Josephson junctions with amorphous boron barriers have been fabricated on C-plane sapphire substrates by using a co-evaporation method. The junctions showed Josephson currents and the nonlinear current-voltage characteristics which seem to reflect the superconducting energy gap. The critical current was observed when the thickness of the amorphous boron was in the range of 5 nm to 20 nm. The critical current density was estimated to be 0.4 A/cm2 to 450 A/cm2. By observing he temperature dependence of the critical current we found that the junction had a critical temperature of 10 K and a normal layer in its barrier structure.
ER -