The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Ciri-ciri pengaturcaraan peranti memori tak meruap polysilicon-aluminium oxide-nitride-oxide-silicon (SANOS) dengan Al2O3 dan SiO2 lapisan terowong bertindan telah disiasat. Elektron dan lubang hanyut dalam Si3N4 lapisan dikira untuk menentukan kelajuan program peranti SANOS yang dicadangkan. Keputusan simulasi menunjukkan bahawa peningkatan kelajuan pengaturcaraan dalam SANOS dicapai dengan menggunakan SiO2 dan Al2O3 lapisan terowong bertindan.
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Salinan
Hyun Woo KIM, Dong Hun KIM, Joo Hyung YOU, Tae Whan KIM, "Enhancement of the Programming Speed in SANOS Nonvolatile Memory Device Designed Utilizing Al2O3 and SiO2 Stacked Tunneling Layers" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 5, pp. 651-653, May 2010, doi: 10.1587/transele.E93.C.651.
Abstract: The programming characteristics of polysilicon-aluminum oxide-nitride-oxide-silicon (SANOS) nonvolatile memory devices with Al2O3 and SiO2 stacked tunneling layers were investigated. The electron and hole drifts in the Si3N4 layer were calculated to determine the program speed of the proposed SANOS devices. Simulation results showed that enhancement of the programming speed in SANOS was achieved by utilizing SiO2 and Al2O3 stacked tunneling layers.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.651/_p
Salinan
@ARTICLE{e93-c_5_651,
author={Hyun Woo KIM, Dong Hun KIM, Joo Hyung YOU, Tae Whan KIM, },
journal={IEICE TRANSACTIONS on Electronics},
title={Enhancement of the Programming Speed in SANOS Nonvolatile Memory Device Designed Utilizing Al2O3 and SiO2 Stacked Tunneling Layers},
year={2010},
volume={E93-C},
number={5},
pages={651-653},
abstract={The programming characteristics of polysilicon-aluminum oxide-nitride-oxide-silicon (SANOS) nonvolatile memory devices with Al2O3 and SiO2 stacked tunneling layers were investigated. The electron and hole drifts in the Si3N4 layer were calculated to determine the program speed of the proposed SANOS devices. Simulation results showed that enhancement of the programming speed in SANOS was achieved by utilizing SiO2 and Al2O3 stacked tunneling layers.},
keywords={},
doi={10.1587/transele.E93.C.651},
ISSN={1745-1353},
month={May},}
Salinan
TY - JOUR
TI - Enhancement of the Programming Speed in SANOS Nonvolatile Memory Device Designed Utilizing Al2O3 and SiO2 Stacked Tunneling Layers
T2 - IEICE TRANSACTIONS on Electronics
SP - 651
EP - 653
AU - Hyun Woo KIM
AU - Dong Hun KIM
AU - Joo Hyung YOU
AU - Tae Whan KIM
PY - 2010
DO - 10.1587/transele.E93.C.651
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2010
AB - The programming characteristics of polysilicon-aluminum oxide-nitride-oxide-silicon (SANOS) nonvolatile memory devices with Al2O3 and SiO2 stacked tunneling layers were investigated. The electron and hole drifts in the Si3N4 layer were calculated to determine the program speed of the proposed SANOS devices. Simulation results showed that enhancement of the programming speed in SANOS was achieved by utilizing SiO2 and Al2O3 stacked tunneling layers.
ER -