The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Penskalaan rendah teknologi CMOS telah menghasilkan peningkatan yang kukuh dalam prestasi RF bagi MOSFET pukal dan SOI. Untuk merealisasikan litar RF hingar rendah, pemahaman yang lebih mendalam tentang prestasi hingar untuk MOSFET diperlukan. Bunyi terma ialah punca hingar utama peranti CMOS untuk prestasi frekuensi tinggi, dan didominasi oleh hingar saluran longkang, hingar pintu teraruh dan bunyi korelasinya. Dalam kerja ini, kami mengukur parameter hingar RF (Fminit, Rn, Γ pilih) daripada MOSFET nod 45 nm dari 5 hingga 15 GHz dan sumber hingar yang diekstrak dan pekali hingar P, R, dan C dengan menggunakan model van der Ziel yang dipanjangkan. Kami mendapati, buat kali pertama, pekali korelasi itu C berkurangan daripada nilai positif kepada nilai negatif apabila panjang get dikurangkan secara berterusan dengan panjang get sub-100 nm. Kami mengesahkan bahawa model angka hingar Pucel, menggunakan pekali hingar P, R, dan C, boleh dianggap sebagai anggaran yang baik walaupun untuk MOSFET sub-50 nm. Kami juga membincangkan kesan penskalaan pekali hingar, terutamanya pekali hingar korelasi C pada angka hingar minimum.
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Salinan
Hiroshi SHIMOMURA, Kuniyuki KAKUSHIMA, Hiroshi IWAI, "Effect of High Frequency Noise Current Sources on Noise Figure for Sub-50 nm Node MOSFETs" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 5, pp. 678-684, May 2010, doi: 10.1587/transele.E93.C.678.
Abstract: The downscaling of CMOS technology has resulted in strong improvement in RF performance of bulk and SOI MOSFETs. In order to realize a low-noise RF circuit, a deeper understanding of the noise performance for MOSFETs is required. Thermal noise is the main noise source of the CMOS device for high frequency performance, and is dominated by the drain channel noise, induced gate noise, and their correlation noise. In this work, we measured the RF noise parameter (Fmin, Rn, Γ opt) of 45 nm node MOSFETs from 5 to 15 GHz and extracted noise sources and noise coefficients P, R, and C by using an extended van der Ziel's model. We found, for the first time, that correlation coefficient C decreases from positive to negative values when the gate length is reduced continuously with the gate length of sub-100 nm. We confirmed that Pucel's noise figure model, using noise coefficients P, R, and C, can be considered a good approximation even for sub-50 nm MOSFETs. We also discussed a scaling effect of the noise coefficients, especially the correlation noise coefficient C on the minimum noise figure.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.678/_p
Salinan
@ARTICLE{e93-c_5_678,
author={Hiroshi SHIMOMURA, Kuniyuki KAKUSHIMA, Hiroshi IWAI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Effect of High Frequency Noise Current Sources on Noise Figure for Sub-50 nm Node MOSFETs},
year={2010},
volume={E93-C},
number={5},
pages={678-684},
abstract={The downscaling of CMOS technology has resulted in strong improvement in RF performance of bulk and SOI MOSFETs. In order to realize a low-noise RF circuit, a deeper understanding of the noise performance for MOSFETs is required. Thermal noise is the main noise source of the CMOS device for high frequency performance, and is dominated by the drain channel noise, induced gate noise, and their correlation noise. In this work, we measured the RF noise parameter (Fmin, Rn, Γ opt) of 45 nm node MOSFETs from 5 to 15 GHz and extracted noise sources and noise coefficients P, R, and C by using an extended van der Ziel's model. We found, for the first time, that correlation coefficient C decreases from positive to negative values when the gate length is reduced continuously with the gate length of sub-100 nm. We confirmed that Pucel's noise figure model, using noise coefficients P, R, and C, can be considered a good approximation even for sub-50 nm MOSFETs. We also discussed a scaling effect of the noise coefficients, especially the correlation noise coefficient C on the minimum noise figure.},
keywords={},
doi={10.1587/transele.E93.C.678},
ISSN={1745-1353},
month={May},}
Salinan
TY - JOUR
TI - Effect of High Frequency Noise Current Sources on Noise Figure for Sub-50 nm Node MOSFETs
T2 - IEICE TRANSACTIONS on Electronics
SP - 678
EP - 684
AU - Hiroshi SHIMOMURA
AU - Kuniyuki KAKUSHIMA
AU - Hiroshi IWAI
PY - 2010
DO - 10.1587/transele.E93.C.678
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2010
AB - The downscaling of CMOS technology has resulted in strong improvement in RF performance of bulk and SOI MOSFETs. In order to realize a low-noise RF circuit, a deeper understanding of the noise performance for MOSFETs is required. Thermal noise is the main noise source of the CMOS device for high frequency performance, and is dominated by the drain channel noise, induced gate noise, and their correlation noise. In this work, we measured the RF noise parameter (Fmin, Rn, Γ opt) of 45 nm node MOSFETs from 5 to 15 GHz and extracted noise sources and noise coefficients P, R, and C by using an extended van der Ziel's model. We found, for the first time, that correlation coefficient C decreases from positive to negative values when the gate length is reduced continuously with the gate length of sub-100 nm. We confirmed that Pucel's noise figure model, using noise coefficients P, R, and C, can be considered a good approximation even for sub-50 nm MOSFETs. We also discussed a scaling effect of the noise coefficients, especially the correlation noise coefficient C on the minimum noise figure.
ER -