The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Makalah ini menerangkan ungkapan domain masa berdasarkan model fizikal penguat kuasa di mana kesan memori elektrik dianggap disebabkan oleh ketaklinieran tertib genap dan impedans pincang. Ia ditunjukkan bahawa ungkapan domain masa adalah konsisten dengan polinomial memori umum yang dilaporkan oleh DR Morgan et al. Untuk mengesahkan kesahihan model fizikal, kaedah mudah dicadangkan untuk mengukur amplitud dan fasa IMD dengan ujian dua nada: fasa diekstrak daripada parameter S isyarat kecil yang diukur bagi penguat yang sedang diuji. Kaedah ini digunakan pada penguat GaN FET dengan syarat kesan ingatan dipertingkatkan dengan menggunakan kabel induktif untuk bekalan DC. IMD bergantung kepada frekuensi dipasang oleh sambungan selari L, C, dan R: ia telah disahkan bahawa pergantungan frekuensi IMD diberikan oleh galangan pincang pada susunan harmonik frekuensi sampul surat. Kebergantungan kekerapan menjamin kesahihan model fizikal serta ungkapan domain masa.
Takeshi TAKANO
Yasuyuki OHISHI
Shigekazu KIMURA
Michiharu NAKAMURA
Kazuo NAGATANI
Eisuke FUKUDA
Yoshimasa DAIDO
Kiyomichi ARAKI
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Salinan
Takeshi TAKANO, Yasuyuki OHISHI, Shigekazu KIMURA, Michiharu NAKAMURA, Kazuo NAGATANI, Eisuke FUKUDA, Yoshimasa DAIDO, Kiyomichi ARAKI, "Efficient Method to Measure IMD of Power Amplifier with Simplified Phase Determination Procedure to Clarify Memory Effect Origins" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 7, pp. 991-999, July 2010, doi: 10.1587/transele.E93.C.991.
Abstract: This paper describes a time-domain expression based on the physical model of power amplifiers where electric memory effect is considered to be caused by even-order nonlinearity and bias impedance. It is demonstrated that the time-domain expression is consistent with the general memory polynomial reported by D.R. Morgan et al. To confirm validity of the physical model, a simple method is proposed to measure amplitude and phase of IMD by two tone test: the phase is extracted from measured small signal S-parameters of the amplifier under test. The method is applied to a GaN FET amplifier under condition that memory effect is enhanced by applying inductive cable for DC supply. Frequency dependent IMD is fitted by a parallel connection of L, C, and R: it has been confirmed that the frequency dependence of IMD is given by the bias impedance at even order harmonics of envelope frequency. The frequency dependence assures the validity of the physical model as well as the time-domain expression.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.991/_p
Salinan
@ARTICLE{e93-c_7_991,
author={Takeshi TAKANO, Yasuyuki OHISHI, Shigekazu KIMURA, Michiharu NAKAMURA, Kazuo NAGATANI, Eisuke FUKUDA, Yoshimasa DAIDO, Kiyomichi ARAKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Efficient Method to Measure IMD of Power Amplifier with Simplified Phase Determination Procedure to Clarify Memory Effect Origins},
year={2010},
volume={E93-C},
number={7},
pages={991-999},
abstract={This paper describes a time-domain expression based on the physical model of power amplifiers where electric memory effect is considered to be caused by even-order nonlinearity and bias impedance. It is demonstrated that the time-domain expression is consistent with the general memory polynomial reported by D.R. Morgan et al. To confirm validity of the physical model, a simple method is proposed to measure amplitude and phase of IMD by two tone test: the phase is extracted from measured small signal S-parameters of the amplifier under test. The method is applied to a GaN FET amplifier under condition that memory effect is enhanced by applying inductive cable for DC supply. Frequency dependent IMD is fitted by a parallel connection of L, C, and R: it has been confirmed that the frequency dependence of IMD is given by the bias impedance at even order harmonics of envelope frequency. The frequency dependence assures the validity of the physical model as well as the time-domain expression.},
keywords={},
doi={10.1587/transele.E93.C.991},
ISSN={1745-1353},
month={July},}
Salinan
TY - JOUR
TI - Efficient Method to Measure IMD of Power Amplifier with Simplified Phase Determination Procedure to Clarify Memory Effect Origins
T2 - IEICE TRANSACTIONS on Electronics
SP - 991
EP - 999
AU - Takeshi TAKANO
AU - Yasuyuki OHISHI
AU - Shigekazu KIMURA
AU - Michiharu NAKAMURA
AU - Kazuo NAGATANI
AU - Eisuke FUKUDA
AU - Yoshimasa DAIDO
AU - Kiyomichi ARAKI
PY - 2010
DO - 10.1587/transele.E93.C.991
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2010
AB - This paper describes a time-domain expression based on the physical model of power amplifiers where electric memory effect is considered to be caused by even-order nonlinearity and bias impedance. It is demonstrated that the time-domain expression is consistent with the general memory polynomial reported by D.R. Morgan et al. To confirm validity of the physical model, a simple method is proposed to measure amplitude and phase of IMD by two tone test: the phase is extracted from measured small signal S-parameters of the amplifier under test. The method is applied to a GaN FET amplifier under condition that memory effect is enhanced by applying inductive cable for DC supply. Frequency dependent IMD is fitted by a parallel connection of L, C, and R: it has been confirmed that the frequency dependence of IMD is given by the bias impedance at even order harmonics of envelope frequency. The frequency dependence assures the validity of the physical model as well as the time-domain expression.
ER -