The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Kami menyiasat sifat fotovoltaik peranti berbilang lapisan yang terdiri daripada ITO/oksida/Tetraphenyl porphyrin (H2TPP)/Fullerene (C60)/Bathocuproine (BCP)/struktur Al. VOC meningkat dengan ketara dengan kemasukan NiO dan MoO3 lapisan pengumpulan lubang. Walau bagaimanapun, gelagat "kusut" dan sifat bergantung kepada suhu diperhatikan untuk peranti dengan dan tanpa MoO3 terutamanya untuk H yang tebal2Filem TPP. Kami menunjukkan analisis sifat fotovoltaik menggunakan model Poole-Frenkel dan Schottky berdasarkan kelakuan dielektrik porfirin dan MoO3 lapisan.
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Salinan
Eiji ITOH, Yuji HIGUCHI, Daisuke FURUHATA, "Current-Voltage Characteristics of Porphyrin/C60 Multi-Layered Organic Photovoltaic Device with and without Hole Collection Oxide Films" in IEICE TRANSACTIONS on Electronics,
vol. E94-C, no. 2, pp. 181-184, February 2011, doi: 10.1587/transele.E94.C.181.
Abstract: We investigated the photovoltaic properties of multilayered devices consisting of ITO/oxide/Tetraphenyl porphyrin (H2TPP)/Fullerene (C60)/Bathocuproine (BCP)/Al structures. The VOC markedly increases with the insertion of NiO and MoO3 hole collection layers. However, the "kink" behaviors and temperature dependent properties are observed for the devices with and without MoO3 especially for the thick H2TPP film. We demonstrated the analysis of the photovoltaic properties using the Poole-Frenkel and Schottky models based on the dielectric behaviors of porphyrin and MoO3 layers.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E94.C.181/_p
Salinan
@ARTICLE{e94-c_2_181,
author={Eiji ITOH, Yuji HIGUCHI, Daisuke FURUHATA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Current-Voltage Characteristics of Porphyrin/C60 Multi-Layered Organic Photovoltaic Device with and without Hole Collection Oxide Films},
year={2011},
volume={E94-C},
number={2},
pages={181-184},
abstract={We investigated the photovoltaic properties of multilayered devices consisting of ITO/oxide/Tetraphenyl porphyrin (H2TPP)/Fullerene (C60)/Bathocuproine (BCP)/Al structures. The VOC markedly increases with the insertion of NiO and MoO3 hole collection layers. However, the "kink" behaviors and temperature dependent properties are observed for the devices with and without MoO3 especially for the thick H2TPP film. We demonstrated the analysis of the photovoltaic properties using the Poole-Frenkel and Schottky models based on the dielectric behaviors of porphyrin and MoO3 layers.},
keywords={},
doi={10.1587/transele.E94.C.181},
ISSN={1745-1353},
month={February},}
Salinan
TY - JOUR
TI - Current-Voltage Characteristics of Porphyrin/C60 Multi-Layered Organic Photovoltaic Device with and without Hole Collection Oxide Films
T2 - IEICE TRANSACTIONS on Electronics
SP - 181
EP - 184
AU - Eiji ITOH
AU - Yuji HIGUCHI
AU - Daisuke FURUHATA
PY - 2011
DO - 10.1587/transele.E94.C.181
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E94-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2011
AB - We investigated the photovoltaic properties of multilayered devices consisting of ITO/oxide/Tetraphenyl porphyrin (H2TPP)/Fullerene (C60)/Bathocuproine (BCP)/Al structures. The VOC markedly increases with the insertion of NiO and MoO3 hole collection layers. However, the "kink" behaviors and temperature dependent properties are observed for the devices with and without MoO3 especially for the thick H2TPP film. We demonstrated the analysis of the photovoltaic properties using the Poole-Frenkel and Schottky models based on the dielectric behaviors of porphyrin and MoO3 layers.
ER -