The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Kepelbagaian ciri peranti biasanya dianggap sebagai taburan normal. Jika kita mempertimbangkan kebolehubahan ke atas keseluruhan wafer, bagaimanapun, ia tidak boleh dinyatakan sebagai taburan normal kerana kewujudan komponen sistematik global. Kami mencadangkan model statistik, mencirikan komponen sistematik global mengikut jarak dari pusat wafer, yang boleh menyatakan kebolehubahan ke atas keseluruhan wafer secara statistik.
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Salinan
Kenichi OKADA, Hidetoshi ONODERA, "Statistical Modeling of Device Characteristics with Systematic Variability" in IEICE TRANSACTIONS on Fundamentals,
vol. E84-A, no. 2, pp. 529-536, February 2001, doi: .
Abstract: The variabilities of device characteristics are usually regarded as a normal distribution. If we consider the variabilities over the whole wafer, however, they cannot be expressed as a normal distribution due to the existence of global systematic component. We propose a statistical model, characterizing the global systematic component according to the distance from the center of the wafer, which can express the variabilities over the whole wafer statistically.
URL: https://global.ieice.org/en_transactions/fundamentals/10.1587/e84-a_2_529/_p
Salinan
@ARTICLE{e84-a_2_529,
author={Kenichi OKADA, Hidetoshi ONODERA, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={Statistical Modeling of Device Characteristics with Systematic Variability},
year={2001},
volume={E84-A},
number={2},
pages={529-536},
abstract={The variabilities of device characteristics are usually regarded as a normal distribution. If we consider the variabilities over the whole wafer, however, they cannot be expressed as a normal distribution due to the existence of global systematic component. We propose a statistical model, characterizing the global systematic component according to the distance from the center of the wafer, which can express the variabilities over the whole wafer statistically.},
keywords={},
doi={},
ISSN={},
month={February},}
Salinan
TY - JOUR
TI - Statistical Modeling of Device Characteristics with Systematic Variability
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 529
EP - 536
AU - Kenichi OKADA
AU - Hidetoshi ONODERA
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Fundamentals
SN -
VL - E84-A
IS - 2
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - February 2001
AB - The variabilities of device characteristics are usually regarded as a normal distribution. If we consider the variabilities over the whole wafer, however, they cannot be expressed as a normal distribution due to the existence of global systematic component. We propose a statistical model, characterizing the global systematic component according to the distance from the center of the wafer, which can express the variabilities over the whole wafer statistically.
ER -