The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
pandangan teks lengkap
140
Sebagai tindak balas kepada sistem pengecasan pantas, peranti semikonduktor kuasa Silicon Carbide (SiC) amat menarik minat aplikasi elektronik kuasa automotif kerana sistem pengecasan pantas generasi seterusnya memerlukan bateri voltan tinggi. Untuk EV bateri voltan tinggi (Kenderaan Elektrik) melebihi 800V, peranti semikonduktor kuasa SiC sesuai untuk penyongsang 3 fasa, pengecas bateri dan penukar DC-DC terpencil kerana penarafan voltan tinggi dan prestasi kecekapan tinggi. Walau bagaimanapun, SiC-MOSFET mempunyai dua ciri yang mengganggu pensuisan berkelajuan tinggi dan operasi prestasi kecekapan tinggi untuk aplikasi SiC MOS-FET dalam sistem elektronik kuasa automotif. Satu ciri ialah penarafan voltan rendah terminal sumber pintu, dan satu lagi ialah rintangan pintu dalaman yang besar bagi SiC MOS-FET. Tujuan kerja ini adalah untuk menilai litar pemacu gerbang hibrid yang dicadangkan yang boleh mengabaikan rintangan pintu dalaman dan mengekalkan kestabilan terminal sumber pintu bagi aplikasi SiC-MOSFET. Telah didapati bahawa litar pemacu get hibrid yang dicadangkan boleh mencapai prestasi pensuisan kehilangan yang lebih cepat dan lebih rendah daripada litar pemacu get konvensional dengan menggunakan ciri pemacu get sumber semasa. Di samping itu, litar pemacu get yang dicadangkan boleh menggunakan ciri pemacu get sumber voltan untuk melindungi terminal sumber get walaupun penarafan voltan rendah terminal sumber get SiC MOS-FET.
Masayoshi YAMAMOTO
Nagoya University
Shinya SHIRAI
Mitsubishi Heavy Industries Ltd
Senanayake THILAK
Nagoya University
Jun IMAOKA
Nagoya University
Ryosuke ISHIDO
ROHM Co., Ltd
Yuta OKAWAUCHI
ROHM Co., Ltd
Ken NAKAHARA
ROHM Co., Ltd
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Salinan
Masayoshi YAMAMOTO, Shinya SHIRAI, Senanayake THILAK, Jun IMAOKA, Ryosuke ISHIDO, Yuta OKAWAUCHI, Ken NAKAHARA, "An Evaluation of a New Type of High Efficiency Hybrid Gate Drive Circuit for SiC-MOSFET Suitable for Automotive Power Electronics System Applications" in IEICE TRANSACTIONS on Fundamentals,
vol. E105-A, no. 5, pp. 834-843, May 2022, doi: 10.1587/transfun.2021GCI0001.
Abstract: In response to fast charging systems, Silicon Carbide (SiC) power semiconductor devices are of great interest of the automotive power electronics applications as the next generation of fast charging systems require high voltage batteries. For high voltage battery EVs (Electric Vehicles) over 800V, SiC power semiconductor devices are suitable for 3-phase inverters, battery chargers, and isolated DC-DC converters due to their high voltage rating and high efficiency performance. However, SiC-MOSFETs have two characteristics that interfere with high-speed switching and high efficiency performance operations for SiC MOS-FET applications in automotive power electronics systems. One characteristic is the low voltage rating of the gate-source terminal, and the other is the large internal gate-resistance of SiC MOS-FET. The purpose of this work was to evaluate a proposed hybrid gate drive circuit that could ignore the internal gate-resistance and maintain the gate-source terminal stability of the SiC-MOSFET applications. It has been found that the proposed hybrid gate drive circuit can achieve faster and lower loss switching performance than conventional gate drive circuits by using the current source gate drive characteristics. In addition, the proposed gate drive circuit can use the voltage source gate drive characteristics to protect the gate-source terminals despite the low voltage rating of the SiC MOS-FET gate-source terminals.
URL: https://global.ieice.org/en_transactions/fundamentals/10.1587/transfun.2021GCI0001/_p
Salinan
@ARTICLE{e105-a_5_834,
author={Masayoshi YAMAMOTO, Shinya SHIRAI, Senanayake THILAK, Jun IMAOKA, Ryosuke ISHIDO, Yuta OKAWAUCHI, Ken NAKAHARA, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={An Evaluation of a New Type of High Efficiency Hybrid Gate Drive Circuit for SiC-MOSFET Suitable for Automotive Power Electronics System Applications},
year={2022},
volume={E105-A},
number={5},
pages={834-843},
abstract={In response to fast charging systems, Silicon Carbide (SiC) power semiconductor devices are of great interest of the automotive power electronics applications as the next generation of fast charging systems require high voltage batteries. For high voltage battery EVs (Electric Vehicles) over 800V, SiC power semiconductor devices are suitable for 3-phase inverters, battery chargers, and isolated DC-DC converters due to their high voltage rating and high efficiency performance. However, SiC-MOSFETs have two characteristics that interfere with high-speed switching and high efficiency performance operations for SiC MOS-FET applications in automotive power electronics systems. One characteristic is the low voltage rating of the gate-source terminal, and the other is the large internal gate-resistance of SiC MOS-FET. The purpose of this work was to evaluate a proposed hybrid gate drive circuit that could ignore the internal gate-resistance and maintain the gate-source terminal stability of the SiC-MOSFET applications. It has been found that the proposed hybrid gate drive circuit can achieve faster and lower loss switching performance than conventional gate drive circuits by using the current source gate drive characteristics. In addition, the proposed gate drive circuit can use the voltage source gate drive characteristics to protect the gate-source terminals despite the low voltage rating of the SiC MOS-FET gate-source terminals.},
keywords={},
doi={10.1587/transfun.2021GCI0001},
ISSN={1745-1337},
month={May},}
Salinan
TY - JOUR
TI - An Evaluation of a New Type of High Efficiency Hybrid Gate Drive Circuit for SiC-MOSFET Suitable for Automotive Power Electronics System Applications
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 834
EP - 843
AU - Masayoshi YAMAMOTO
AU - Shinya SHIRAI
AU - Senanayake THILAK
AU - Jun IMAOKA
AU - Ryosuke ISHIDO
AU - Yuta OKAWAUCHI
AU - Ken NAKAHARA
PY - 2022
DO - 10.1587/transfun.2021GCI0001
JO - IEICE TRANSACTIONS on Fundamentals
SN - 1745-1337
VL - E105-A
IS - 5
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - May 2022
AB - In response to fast charging systems, Silicon Carbide (SiC) power semiconductor devices are of great interest of the automotive power electronics applications as the next generation of fast charging systems require high voltage batteries. For high voltage battery EVs (Electric Vehicles) over 800V, SiC power semiconductor devices are suitable for 3-phase inverters, battery chargers, and isolated DC-DC converters due to their high voltage rating and high efficiency performance. However, SiC-MOSFETs have two characteristics that interfere with high-speed switching and high efficiency performance operations for SiC MOS-FET applications in automotive power electronics systems. One characteristic is the low voltage rating of the gate-source terminal, and the other is the large internal gate-resistance of SiC MOS-FET. The purpose of this work was to evaluate a proposed hybrid gate drive circuit that could ignore the internal gate-resistance and maintain the gate-source terminal stability of the SiC-MOSFET applications. It has been found that the proposed hybrid gate drive circuit can achieve faster and lower loss switching performance than conventional gate drive circuits by using the current source gate drive characteristics. In addition, the proposed gate drive circuit can use the voltage source gate drive characteristics to protect the gate-source terminals despite the low voltage rating of the SiC MOS-FET gate-source terminals.
ER -