The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Jalur lebar, hingar rendah dan pemancar sangat linear untuk radio berbilang mod dipersembahkan. Skim suntikan sampul surat dengan penguat CMOS dibangunkan untuk mendapatkan kelinearan yang mencukupi untuk skim modulasi kompleks seperti OFDM, dan untuk mencapai hingar rendah untuk operasi serentak lebih daripada satu standard. Teknik pemadanan aktif dengan topologi LPF yang ditamatkan dua kali ganda juga dipersembahkan untuk merealisasikan lebar jalur lebar, penggunaan kuasa yang rendah, dan untuk menghapuskan komponen luar cip tanpa meningkatkan kawasan mati. Pemancar berbilang mod dilaksanakan dalam teknologi CMOS 0.13 µm dengan kawasan aktif 1.13 mm2. Produk intermodulasi tertib ketiga dipertingkatkan sebanyak 17 dB pada -3 dBm keluaran oleh skim suntikan sampul surat. Pemancar mencapai EVM kurang daripada -29.5 dB pada -3 dBm output daripada 0.2 hingga 7.2 GHz manakala menggunakan hanya 69 mW. Pemancar juga diuji dengan pelbagai piawaian UMTS, 802.11b, WiMax, 802.11a dan 802.11n serta memenuhi spesifikasi EVM, ACLR dan spektrum.
Shouhei KOUSAI
Daisuke MIYASHITA
Junji WADATSUMI
Rui ITO
Takahiro SEKIGUCHI
Mototsugu HAMADA
Kenichi OKADA
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Salinan
Shouhei KOUSAI, Daisuke MIYASHITA, Junji WADATSUMI, Rui ITO, Takahiro SEKIGUCHI, Mototsugu HAMADA, Kenichi OKADA, "A Low-Noise and Highly-Linear Transmitter with Envelope Injection Pre-Power Amplifier for Multi-Mode Radio" in IEICE TRANSACTIONS on Fundamentals,
vol. E94-A, no. 2, pp. 592-602, February 2011, doi: 10.1587/transfun.E94.A.592.
Abstract: A wideband, low noise, and highly linear transmitter for multi-mode radio is presented. Envelope injection scheme with a CMOS amplifier is developed to obtain sufficient linearity for complex modulation schemes such as OFDM, and to achieve low noise for concurrent operation of more than one standard. Active matching technique with doubly terminated LPF topology is also presented to realize wide bandwidth, low power consumption, and to eliminate off-chip components without increasing die area. A multi-mode transmitter is implemented in a 0.13 µm CMOS technology with an active area of 1.13 mm2. Third-order intermodulation product is improved by 17 dB at -3 dBm output by the envelope injection scheme. The transmitter achieves EVM of less than -29.5 dB at -3 dBm output from 0.2 to 7.2 GHz while consuming only 69 mW. The transmitter is also tested with multiple standards of UMTS, 802.11b, WiMax, 802.11a, and 802.11n, and satisfies EVM, ACLR, and spectrum specifications.
URL: https://global.ieice.org/en_transactions/fundamentals/10.1587/transfun.E94.A.592/_p
Salinan
@ARTICLE{e94-a_2_592,
author={Shouhei KOUSAI, Daisuke MIYASHITA, Junji WADATSUMI, Rui ITO, Takahiro SEKIGUCHI, Mototsugu HAMADA, Kenichi OKADA, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={A Low-Noise and Highly-Linear Transmitter with Envelope Injection Pre-Power Amplifier for Multi-Mode Radio},
year={2011},
volume={E94-A},
number={2},
pages={592-602},
abstract={A wideband, low noise, and highly linear transmitter for multi-mode radio is presented. Envelope injection scheme with a CMOS amplifier is developed to obtain sufficient linearity for complex modulation schemes such as OFDM, and to achieve low noise for concurrent operation of more than one standard. Active matching technique with doubly terminated LPF topology is also presented to realize wide bandwidth, low power consumption, and to eliminate off-chip components without increasing die area. A multi-mode transmitter is implemented in a 0.13 µm CMOS technology with an active area of 1.13 mm2. Third-order intermodulation product is improved by 17 dB at -3 dBm output by the envelope injection scheme. The transmitter achieves EVM of less than -29.5 dB at -3 dBm output from 0.2 to 7.2 GHz while consuming only 69 mW. The transmitter is also tested with multiple standards of UMTS, 802.11b, WiMax, 802.11a, and 802.11n, and satisfies EVM, ACLR, and spectrum specifications.},
keywords={},
doi={10.1587/transfun.E94.A.592},
ISSN={1745-1337},
month={February},}
Salinan
TY - JOUR
TI - A Low-Noise and Highly-Linear Transmitter with Envelope Injection Pre-Power Amplifier for Multi-Mode Radio
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 592
EP - 602
AU - Shouhei KOUSAI
AU - Daisuke MIYASHITA
AU - Junji WADATSUMI
AU - Rui ITO
AU - Takahiro SEKIGUCHI
AU - Mototsugu HAMADA
AU - Kenichi OKADA
PY - 2011
DO - 10.1587/transfun.E94.A.592
JO - IEICE TRANSACTIONS on Fundamentals
SN - 1745-1337
VL - E94-A
IS - 2
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - February 2011
AB - A wideband, low noise, and highly linear transmitter for multi-mode radio is presented. Envelope injection scheme with a CMOS amplifier is developed to obtain sufficient linearity for complex modulation schemes such as OFDM, and to achieve low noise for concurrent operation of more than one standard. Active matching technique with doubly terminated LPF topology is also presented to realize wide bandwidth, low power consumption, and to eliminate off-chip components without increasing die area. A multi-mode transmitter is implemented in a 0.13 µm CMOS technology with an active area of 1.13 mm2. Third-order intermodulation product is improved by 17 dB at -3 dBm output by the envelope injection scheme. The transmitter achieves EVM of less than -29.5 dB at -3 dBm output from 0.2 to 7.2 GHz while consuming only 69 mW. The transmitter is also tested with multiple standards of UMTS, 802.11b, WiMax, 802.11a, and 802.11n, and satisfies EVM, ACLR, and spectrum specifications.
ER -